Abstract:This Letter reports low-temperature (700 °C) growth of heavily Si-doped GaN (n ++ GaN) by metal-organic chemical vapor deposition with a resistivity as low as 1.9 × 10 −4 Ω·cm and an atomically smooth surface. Indium adatoms added during the growth of n ++ GaN play an important role in improving both the surface morphology and free electron concentration. On the one hand, acting as surfactant, they greatly boost the adatoms surface mobility at low growth temperature and mitigate Si-induced anti-surfactant effect. On the other hand, they can effectively suppress the formation of compensating defects, thus contributing to an extremely high electron concentration of 2.8 × 10 20 cm −3 . This high-quality n ++ GaN was further applied to the realization of Ohmic contacts with an ultra-low contact resistance for AlGaN/GaN high electron mobility transistors. The carrier gas was carefully modulated for the selective area epitaxy (SAE) of n ++ GaN to facilitate the nucleation of GaN on the dielectric mask, which effectively suppressed the undesired mass transport and resulted in a uniform SAE of n ++ GaN in the recessed source/drain regions. A nearly defect-free interface between the n ++ GaN and two-dimensional electron gas channel has been also realized, and the resistance induced by the interface was only 0.03 Ω·mm. As a result, an ultra-low contact resistance of 0.07 Ω·mm has been realized. This work lays a solid foundation for further improving the performance of GaN-based RF and power devices.

Room Temperature 2DEG Mobility Above 2350 cm2/V·s in AlGaN/GaN HEMT Grown on GaN Substrate

Room Temperature Mobility above 2100 Cm2/Vs in Al0.3ga0.7n/Ain/Gan Heterostructures Grown on Sapphire Substrates by Mocvd

MOCVD-grown High-Mobility Al0.3Ga0.7N/AlN/GaN HEMT Structure on Sapphire Substrate

AlGaN/GaN/InGaN/GaN DH‐HEMTs Structure with an AlN Interlayer Grown by MOCVD

MOCVD-Grown AlGaN/AlN/GaN HEMT Structure with High Mobility GaN Thin Layer As Channel on SiC

Abnormal increase of 2DEG density in AlGaN/GaN HEMT grown on free-standing GaN substrate

AlGaN/GaN Heterostructure Field Effect Transistor Materials Grown by Molecular Beam Epitaxy

MOCVD grown AlGaN/AlN/GaN HEMT structure with compositionally step-graded AlGaN barrier layer

AlGaN/AlN/GaN/InGaN/GaN DH-HEMTs with Improved Mobility Grown by MOCVD

Algan/Gan/Ingan/Gan Dh-Hemts with Gan Channel Layer Grown at High Temperature

Electron Mobility Exceeding 10(4) Cm(2)/Vs In An Algan-Gan Heterostructure Grown On A Sapphire Substrate

Improved DC and RF performance of AlGaN/GaN HEMTs grown by MOCVD on sapphire substrates

High Electron Mobility in Nearly Lattice-Matched AlInN∕AlN∕GaN Heterostructure Field Effect Transistors

Growth and Characterization of AlGaN/AlN_a/GaN/AlN_b/GaN HEMT Structure Materials

Electron mobility enhancement by electric field engineering of AlN/GaN/AlN quantum-well HEMTs on single-crystal AlN substrates

MBE-grown AlGaN/GaN HEMTs with 186 mS/mm Transcond uctance

High Quality and Uniformity Gan Grown on 150 Mm Si Substrate Using In-Situ Nh3 Pulse Flow Cleaning Process

AIGaN/GaN Polarization-Induced Two-Dimensional Electron Gas Materials Grown by Radio-Frequency Plasma Assisted Molecular Beam Epitaxy

Improvement in surface morphology and 2DEG properties of AlGaN/GaN HEMT

Selective area epitaxy of degenerate n-GaN for HEMT ohmic contact by MOCVD

Boosting the Two-Dimensional Electron Gas Density of Al0.20Ga0.80N/GaN Heterostructures by Regrowth of an Epitaxial Sc0.18Al0.82N Layer