Abstract:This work presents theoretical demonstration of two-dimensional electron gas (2DEG) at the interface between Al 0.2 Ga 0.8 N and 4H-SiC, based on the self-consistent solution of Schrödinger-Poisson equations. High sheet carrier density of 1.1×10 13 cm -2 was obtained in the Al 0.2 Ga 0.8 N/4H-SiC heterostructure, which is comparable to the electron concentration in Al 0.2 Ga 0.8 N/GaN heterostructure. The current-voltage characteristics of a high-electron-mobility transistor (HEMT), based on the Al 0.2 Ga 0.8 N/4H-SiC heterostructure, show a saturated drain current of 1.5 A/mm at the gate voltage of 2 V and the transconductance of 194 mS/mm at -3.95 V. In spite of interface-roughness scattering and phonon scattering, the 2DEG at the Al x Ga 1-x N/4H-SiC interface exhibits high electron mobility values of 3365 cm 2 / (V·s) at 77K and 1120 cm 2 / (V·s) at 300K. These results indicate that Al x Ga 1-x N/4H-SiC heterostructure can significantly improve the mobility of SiC based power switching devices.

Aspects of Epitaxial Design and Estimation of 2DEG Mobility in InAlN/AlN/InGaN/GaN High Electron Mobility Transistors

Electron mobility in InxGa1-xN channel HEMTs

Mobility Limiting Scattering Mechanisms in Nitride-Based Two-Dimensional Heterostructures with the Ingan Channel

The effect of AlN interlayer thicknesses on scattering processes in lattice-matched AlInN/GaN two-dimensional electron gas heterostructures

Magneto-transport Properties of MOVPE-grown Al X Ga 1-X N/AlN/GaN Heterostructures with High-Mobility Two-Dimensional Electron Gas

High Electron Mobility in Nearly Lattice-Matched AlInN∕AlN∕GaN Heterostructure Field Effect Transistors

High‐Mobility Two‐Dimensional Electron Gas at InGaN/InN Heterointerface Grown by Molecular Beam Epitaxy

Electron mobility enhancement by electric field engineering of AlN/GaN/AlN quantum-well HEMTs on single-crystal AlN substrates

Al X in 1-X N/GaN Heterostructure Field Effect Transistors

Magnetotransport Properties of Lattice-Matched In0.18al0.82n/Aln/Gan Heterostructures

Numerical Simulation of Two-Dimensional Electron Gas Characteristics of a Novel (inxal1−xn/aln)mqws/gan High Electron Mobility Transistor

Effect of Electric Field On Electron Mobility in Sub-100 nm InAlN/GaN High Electron Mobility Transistors

Fang–Howard Wave Function Modelling of Electron Mobility in AlInGaN/AlN/InGaN/GaN Double Heterostructures*

Low field mobility in bulk GaN and its ternary AlGaN/GaN compounds (quantum kinetic approach)

Two Dimensional Electron Gas In Gan Heterojunction Field Effect Transistors Structures With Aln Spacer

Electron mobility calculation for two-dimensional electron gas in InN/GaN digital alloy channel high electron mobility transistors

Prediction of high-density and high-mobility two-dimensional electron gas at Al<inf>x</inf>Ga<inf>1−x</inf>N/4H-SiC interface

AlGaN/GaN/InGaN/GaN DH‐HEMTs Structure with an AlN Interlayer Grown by MOCVD

Algan/Gan/Ingan/Gan Dh-Hemts with Gan Channel Layer Grown at High Temperature

Room Temperature 2DEG Mobility Above 2350 cm2/V·s in AlGaN/GaN HEMT Grown on GaN Substrate

Low-field Mobility and High-field Velocity of Charge Carriers in InGaAs/InP High-electron-mobility Transistors