Abstract:This work presents theoretical demonstration of two-dimensional electron gas (2DEG) at the interface between Al 0.2 Ga 0.8 N and 4H-SiC, based on the self-consistent solution of Schrödinger-Poisson equations. High sheet carrier density of 1.1×10 13 cm -2 was obtained in the Al 0.2 Ga 0.8 N/4H-SiC heterostructure, which is comparable to the electron concentration in Al 0.2 Ga 0.8 N/GaN heterostructure. The current-voltage characteristics of a high-electron-mobility transistor (HEMT), based on the Al 0.2 Ga 0.8 N/4H-SiC heterostructure, show a saturated drain current of 1.5 A/mm at the gate voltage of 2 V and the transconductance of 194 mS/mm at -3.95 V. In spite of interface-roughness scattering and phonon scattering, the 2DEG at the Al x Ga 1-x N/4H-SiC interface exhibits high electron mobility values of 3365 cm 2 / (V·s) at 77K and 1120 cm 2 / (V·s) at 300K. These results indicate that Al x Ga 1-x N/4H-SiC heterostructure can significantly improve the mobility of SiC based power switching devices.

Electron mobility calculation for two-dimensional electron gas in InN/GaN digital alloy channel high electron mobility transistors

Electron mobility in InxGa1-xN channel HEMTs

Aspects of Epitaxial Design and Estimation of 2DEG Mobility in InAlN/AlN/InGaN/GaN High Electron Mobility Transistors

Numerical Simulation of Two-Dimensional Electron Gas Characteristics of a Novel (inxal1−xn/aln)mqws/gan High Electron Mobility Transistor

Extraction of Channel Electron Effective Mobility in InGaAs/Al $_{\\bf 2}$O$_{\\bf 3}$ n-FinFETs

Improved Channel Electron Mobility Through Electric Field Reduction in GaN Quantum-Well Double-Heterostructures

Effect of Electric Field On Electron Mobility in Sub-100 nm InAlN/GaN High Electron Mobility Transistors

High electron mobility lattice-matched AlInN∕GaN field-effect transistor heterostructures

Fabrication and analysis of InAlN/GaN metal–insulator–semiconductor high-electron-mobility transistors based on AlN/GaN superlattice channel

Ni Diffusion and Its Influence on Electrical Properties of AlxGa1−xN∕GaN Heterostructures

A Poisson–Schrodinger and cellular automaton coupled approach for two-dimensional electron gas transport modeling of GaN-based high mobility electron transistors

Enhancement of 2DEG effective mass in AlN/Al0.78Ga0.22N high electron mobility transistor structure determined by THz optical Hall effect

III–V/Ge High Mobility Channel Integration of InGaAs N-Channel and Ge P-Channel Metal–Oxide–Semiconductor Field-Effect Transistors with Self-Aligned Ni-Based Metal Source/Drain Using Direct Wafer Bonding

Enhanced mobility of ternary InGaAs quantum wells through digital alloying

High‐Mobility Two‐Dimensional Electron Gas at InGaN/InN Heterointerface Grown by Molecular Beam Epitaxy

BAlN alloy for enhanced two-dimensional electron gas characteristics of GaN-based high electron mobility transistor

Prediction of high-density and high-mobility two-dimensional electron gas at Al<inf>x</inf>Ga<inf>1−x</inf>N/4H-SiC interface

A Modelling study of Electron transport in GaN/AlGaN superlattices using Monte Carlo simulation

Electronic Transport in InGaAs / Al 2 O 3 Nfinfets

Low field mobility in bulk GaN and its ternary AlGaN/GaN compounds (quantum kinetic approach)