Abstract:This work presents theoretical demonstration of two-dimensional electron gas (2DEG) at the interface between Al 0.2 Ga 0.8 N and 4H-SiC, based on the self-consistent solution of Schrödinger-Poisson equations. High sheet carrier density of 1.1×10 13 cm -2 was obtained in the Al 0.2 Ga 0.8 N/4H-SiC heterostructure, which is comparable to the electron concentration in Al 0.2 Ga 0.8 N/GaN heterostructure. The current-voltage characteristics of a high-electron-mobility transistor (HEMT), based on the Al 0.2 Ga 0.8 N/4H-SiC heterostructure, show a saturated drain current of 1.5 A/mm at the gate voltage of 2 V and the transconductance of 194 mS/mm at -3.95 V. In spite of interface-roughness scattering and phonon scattering, the 2DEG at the Al x Ga 1-x N/4H-SiC interface exhibits high electron mobility values of 3365 cm 2 / (V·s) at 77K and 1120 cm 2 / (V·s) at 300K. These results indicate that Al x Ga 1-x N/4H-SiC heterostructure can significantly improve the mobility of SiC based power switching devices.

Electron mobility in InxGa1-xN channel HEMTs

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Electron mobility calculation for two-dimensional electron gas in InN/GaN digital alloy channel high electron mobility transistors

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Effect of Electric Field On Electron Mobility in Sub-100 nm InAlN/GaN High Electron Mobility Transistors

Numerical Simulation of Two-Dimensional Electron Gas Characteristics of a Novel (inxal1−xn/aln)mqws/gan High Electron Mobility Transistor

Effect of InGaN Channel on Radio‐Frequency Performance in High‐Electron‐Mobility Transistors with an InAlGaN Barrier

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The effect of AlN interlayer thicknesses on scattering processes in lattice-matched AlInN/GaN two-dimensional electron gas heterostructures

Prediction of high-density and high-mobility two-dimensional electron gas at Al<inf>x</inf>Ga<inf>1−x</inf>N/4H-SiC interface

Electron mobility enhancement by electric field engineering of AlN/GaN/AlN quantum-well HEMTs on single-crystal AlN substrates

Two-dimensional Electron and Hole Gases in InxGa1−xN/AlyGa1−yN/GaN Heterostructure for Enhancement Mode Operation

Comprehensive understanding of intrinsic mobility and sub-10 nm quantum transportation in Ga2SSe monolayer