Abstract:This Letter reports low-temperature (700 °C) growth of heavily Si-doped GaN (n ++ GaN) by metal-organic chemical vapor deposition with a resistivity as low as 1.9 × 10 −4 Ω·cm and an atomically smooth surface. Indium adatoms added during the growth of n ++ GaN play an important role in improving both the surface morphology and free electron concentration. On the one hand, acting as surfactant, they greatly boost the adatoms surface mobility at low growth temperature and mitigate Si-induced anti-surfactant effect. On the other hand, they can effectively suppress the formation of compensating defects, thus contributing to an extremely high electron concentration of 2.8 × 10 20 cm −3 . This high-quality n ++ GaN was further applied to the realization of Ohmic contacts with an ultra-low contact resistance for AlGaN/GaN high electron mobility transistors. The carrier gas was carefully modulated for the selective area epitaxy (SAE) of n ++ GaN to facilitate the nucleation of GaN on the dielectric mask, which effectively suppressed the undesired mass transport and resulted in a uniform SAE of n ++ GaN in the recessed source/drain regions. A nearly defect-free interface between the n ++ GaN and two-dimensional electron gas channel has been also realized, and the resistance induced by the interface was only 0.03 Ω·mm. As a result, an ultra-low contact resistance of 0.07 Ω·mm has been realized. This work lays a solid foundation for further improving the performance of GaN-based RF and power devices.

Mechanism of low Ohmic contact resistance to p-type GaN by suppressed edge dislocations

Selective area epitaxy of degenerate n-GaN for HEMT ohmic contact by MOCVD

The Dichotomous Role of Oxygen in the Ohmic Contact Formation on P-Type GaN Grown by MBE and MOCVD

Ohmic Contact with a Contact Resistivity of 12 Ω ⋅ Mm on P-Gan/algan/gan

Ohmic Contacts in GaN-based Devices

Low Ohmic Contact Resistivity Realized by in Situ SiNx Insertion for High Al-composition-AlGaN/GaN Heterostructure

Ultra-Low Resistance Ohmic Contacts to Gan with High Si Doping Concentrations Grown by Molecular Beam Epitaxy

Very-low-specific-resistance Pd/Ag/Au/Ti/Au alloyed ohmic contact to p GaN for high-current devices

Low-Resistive Ohmic Contacts in High-Electron-Mobility AIN/GaN Heterostructures by Suppressing the Oxygen Incorporation

The Effect of N-polar GaN Domains As Ohmic Contacts

Ohmic Contact of Ti/Al/Ni/Au on N-Face GaN

Unintentionally Doped Semi-Insulating GaN with a Low Dislocation Density Grown by Metalorganic Chemical Vapor Deposition

Pd/In/Ni/Au Contact to N-Polar N-Type Gan Fabricated by Laser Lift-Off

A Novel Ni/Ag/Pt Ohmic Contact to P-Type GaN for Flip-Chip Light-Emitting Diodes

Optimization of Ohmic Contact to Ultrathin-Barrier AlGaN/GaN Heterostructure via an 'Ohmic-Before-Passivation' Process

n- and p-type ohmic contacts at monolayer gallium nitride-metal interfaces.

Low Contact Resistance CMOS-Compatible RF GaN-on-Silicon HEMTs

Realization of low specific-contact-resistance on N-polar GaN surface using heavily-Ge-doped n-type GaN films deposited by low-temperature reactive sputtering technique

High-resistance GaN Epilayers with Low Dislocation Density Via Growth Mode Modification

Carrier transport mechanism of Mg/Pt/Au Ohmic contact on p-GaN/AlGaN/GaN platform with ultra-low resistivity

Excellent wet etching technique using pulsed anodic oxidation for homoepitaxially grown GaN layer