Abstract:The realization of ohimic contact to n-GaN is usually achieved by using Ti/Al bilayer electrodes with high temperature annealing. Nevertheless, the process of high temperature annealing may destruct the (electronic) structure of devices, such as quantum well and superlattice structure. The ultimate objective of this research work is to obtain low resistance ohimic contact to n-GaN without high temperature annealing, thus (avoiding) the destruction of electronic structure effectively. In the research both nonalloyed condition and low temperature annealing are applied. Under nonalloyed condition, we firstly use alloyed TiAl_3 as contact electrode material directly on n-GaN with carrier concentration of 2×10~(18) cm~(-3). Compared with conventional Ti/Al bilayer structure, alloyed TiAl_3 structure facilitates the realization of nonalloyed n-type ohmic contact. However, with annealing at 500 ℃, the contact behavior of Ti/Al bilayer is improved rapidly and achieves ohmic, which is lower than the temperature assumed in some papers. After applying RIE process, both Ti/Al bilayer and TiAl_3 alloyed electrodes behave ohmic, which indicates that the surface of GaN is cleaning, thus intimate contact of Ti and GaN is vital to (achieve) ohmic contact to n-GaN. In the further experiment, Ti/TiAl_3 bilayer structure is introduced to compare with TiAl_3 alloyed structure. Both of the two structures behave ohmic with RIE process, yet TiAl_3 alloyed shows lower contact resistance, and excess Ti has no obvious effect to contact behavior under nonalloyed condition. After annealing with different temperature, Ti/TiAl_3 bilayer structure tends to form an ohmic contact with lower contact resistance. It proves that excess Ti is activated to form ohmic contact at high temperature annealing. Further analysis implies both of the nitrogen vacancies and TiAl_3 mechanisms play a critical role to form a low contact resistance ohmic contact to n-GaN, under the condition of nonalloyed or low annealing temperature. Accordingly, based on alloyed TiAl_3 structure, Ti/TiAl_3/Ni/Au structure is designed, which decreases the contact resistance significantly, and the specific contact resistance of 3×10~(-5) Ω·cm~2 is obtained with CTLM measurement.The introduction of TiAl_3 alloyed material can make a role as high temperature annealing in the aspect of forming TiAl_3 at the interface. With a certain thickness ratio, Ti/TiAl_3 can achieved low ohmic contact with low temperature annealing. Therefore, TiAl_3 alloyed will be promising in the application field of photoelectron and micro-electron devices that require strict temperature conditions.

Realization of low specific-contact-resistance on N-polar GaN surface using heavily-Ge-doped n-type GaN films deposited by low-temperature reactive sputtering technique

Effects of Surface Treatment on Non-alloyed Ti/Al Ohmic Contact of n-GaN

Ultra-Low Resistance Ohmic Contacts to Gan with High Si Doping Concentrations Grown by Molecular Beam Epitaxy

Selective area epitaxy of degenerate n-GaN for HEMT ohmic contact by MOCVD

Ohmic Contact with a Contact Resistivity of 12 Ω ⋅ Mm on P-Gan/algan/gan

Realization of Nonalloyed TiAl3 and Ti/TiAl3 Ohmic Contact to N-Gan

Mechanism of low Ohmic contact resistance to p-type GaN by suppressed edge dislocations

Si-implantation for Low Ohmic Contact Resistances in RF GaN HEMTs

Very-low-specific-resistance Pd/Ag/Au/Ti/Au alloyed ohmic contact to p GaN for high-current devices

Structural investigation of ultra-low resistance deeply recessed sidewall ohmic contacts for AlGaN/GaN HEMTs based on Ti/Al/Ti-metallization

Temperature Dependence of the Specific Resistance in Ti/Al/Ni/Au Ohmic Contacts on (nh4)2sx Treated N-Type GaN

Optimization of Ohmic Contact to Ultrathin-Barrier AlGaN/GaN Heterostructure via an 'Ohmic-Before-Passivation' Process

Pd/In/Ni/Au Contact to N-Polar N-Type Gan Fabricated by Laser Lift-Off

Low Ohmic Contact Resistivity Realized by in Situ SiNx Insertion for High Al-composition-AlGaN/GaN Heterostructure

Carrier transport mechanism of Mg/Pt/Au Ohmic contact on p-GaN/AlGaN/GaN platform with ultra-low resistivity

Formation of Low‐resistance and Thermally Stable Ohmic Contacts to Laser Lift‐off Prepared N‐polar N‐gan

Low specific contact resistivity to n-Ge and well-behaved Ge n+ p diode achieved by multiple implantation and multiple annealing technique

Low-Resistive Ohmic Contacts in High-Electron-Mobility AIN/GaN Heterostructures by Suppressing the Oxygen Incorporation

Formation of Ti/Al ohmic contacts on Si-doped GaN epilayers by low temperature annealing

A Novel Ni/Ag/Pt Ohmic Contact to P-Type GaN for Flip-Chip Light-Emitting Diodes

Optimization of Non-Alloyed Backside Ohmic Contacts to N-Face GaN for Fully Vertical GaN-on-Silicon-Based Power Devices