Abstract:This work investigates the Ohmic contact mechanism and low resistance Ohmic contact preparation for GaN-based high electron mobility transistors (HEMTs) with GaN/AlN superlattice (SL) barriers. The electrical and microstructural characterization of Ti/Al/Ni/Au contacts shows that the formation of Ohmic contacts primarily depends on the TiN islands formed by Ti diffusion in the barrier layer, which is the main reason for the high contact resistance of GaN/AlN SLs HEMTs under conventional high-temperature annealing. A grid deep-recess technique is proposed to establish direct contact between TiN interfacial layer, the barrier, and the two-dimensional electron gas through the sidewalls. This novel technique achieves an Ohmic contact with a low contact resistance of 0.31 Omega mm at low temperatures (700 degrees C). Furthermore, increased grid deep-recess density effectively reduces contact resistance due to the additional contribution from the conduction width. It is also noteworthy that after complete removal of the barrier layer, the impact of recess depth on contact characteristics is minimal, greatly reducing the process complexity of grid deep-recess technique. Consequently, GaN/AlN SLs HEMTs fabricated using the grid deep-recess technique exhibit significant improvements in on-resistance, transconductance and saturation current. These results are expected to expand the potential application of GaN/AlN SL barrier layers in radio frequency and power devices.

Design and Fabrication of Ohmic Contact on AlGaN/GaN Heterostructure

Effects of Surface Treatment on Non-alloyed Ti/Al Ohmic Contact of n-GaN

Electrical Characteristics of Ti/Al/Ti/Au Multilayer Ohmic Contacts to N-Type GaN

Novel Structural Ti/Al-Based Ohmic Contacts on Algan/Gan Heterostructures

Ohmic Contacts in GaN-based Devices

Low Contact Resistance CMOS-Compatible RF GaN-on-Silicon HEMTs

Fabrication and Formation Mechanisms of Ohmic Conducts with Low Annealing Temperature for GaN/AlN Superlattice Barrier HEMTs

Low Ohmic Contact Resistivity Realized by in Situ SiNx Insertion for High Al-composition-AlGaN/GaN Heterostructure

Ohmic Contact to AlGaN/GaN HEMT with Electrodes in Contact with Heterostructure Interface

Ohmic Contact with a Contact Resistivity of 12 Ω ⋅ Mm on P-Gan/algan/gan

Optimization of Ohmic Contact to Ultrathin-Barrier AlGaN/GaN Heterostructure via an 'Ohmic-Before-Passivation' Process

Low-Resistance Ta/Al/Ni/Au Ohmic Contact and Formation Mechanism on AlN/GaN HEMT

Ultralow-Contact-Resistance Au-Free Ohmic Contacts with Low Annealing Temperature on AlGaN/GaN Heterostructures

Ohmic Contact of Ti/Al/Ni/Au on N-Face GaN

Optimization of Contact Resistance and DC Characteristics for AlGaN/GaN HEMTs Utilizing Sub-10 nm Nanohole Etching

Influence and Mechanism of Surface Treatment on Ohmic Contacts to AlGaN Surface

Ti/Al/Ni/Au and Ti/Al/Pt/Au Multi-Layer Ohmic Contacts on AlxGa1-xN/GaN Heterostructures

High thermal stability Ohmic contact for GaN-based devices

Low-Resistive Ohmic Contacts in High-Electron-Mobility AIN/GaN Heterostructures by Suppressing the Oxygen Incorporation

Ti/Al/Pt/Au and Al Ohmic Contacts on Si-Substrated Gan

Low-resistance Ohmic Contact on Polarization-Doped AlGaN/GaN Heterojunction