Abstract:Identifying atomic configurations of impurities in semiconductors is of fundamental interest and practical importance in designing electronic and optoelectronic devices. C impurity acting as one of the most common impurities in GaN, it is believed for a long time that it substitutes at Ga site forming C Ga with +1 charge-state in p -type GaN, while it substitutes at N site forming C N with -1 charge-state in n -type GaN. However, by combining x-ray absorption spectroscopy and first-principles simulations, we observed that C is mainly occupying the N site rather than the Ga one in p -GaN. We further reveal that this is due to an H-induced E F -tuning effect. During growth, the existing H can passivate Mg dopants and upshifts the E F to the upper region of bandgap, leading to the C N formation. After the p -type activation by annealing out H, although the E F is pushed back close to the valence band maximum, whereas the extremely large kinetic barrier can prevent the migration of C from the metastable C N site to ground-state C Ga site, hence stabilizing the C N configuration. Additionally, the C N with neutral charge-state ( CN0 ) in the p -GaN is further observed. Therefore, the real C-related hole-killer in p -type GaN could be C N rather than the commonly expected C Ga . Our work not only offers the unambiguous evidence for the C defect formation in p -GaN but also contributes significantly to an in-depth understanding of the C-related hole-killers and their critical role on electrical and optoelectrical properties of p -GaN and even p -AlGaN.

High Mobility GaN Drift Layer on Si Substrates: the Role of Surface N Vacancy on Carbon Incorporation

High-mobility N−-Gan Drift Layer Grown on Si Substrates

Nitrogen-Concentration Modulated Interface Quality, Band Alignment and Electrical Properties of Hftion/Ge Gate Stack Pretreated by Trimethylaluminum Precursor

Control of Residual Carbon Concentration in GaN High Electron Mobility Transistor and Realization of High-Resistance GaN Grown by Metal-Organic Chemical Vapor Deposition

Nitrogen Diffusion in the Si Growth on GaN by Low-Pressure Chemical Vapor Deposition

Influence of Growth Rate on the Carbon Contamination and Luminescence of GaN Grown on Silicon

High-resistivity Unintentionally Carbon-Doped GaN Layers with Nitrogen As Nucleation Layer Carrier Gas Grown by Metal-Organic Chemical Vapor Deposition

Physical mechanism determining Ge p- and n-MOSFETs mobility in high Ns region and mobility improvement by atomically flat GeOx/Ge interfaces

Interface quality modulation, band alignment modification and optimization of electrical properties of HfGdO/Ge gate stacks by nitrogen incorporation

Investigation of Defect Characteristics and Carrier Transport Mechanisms in GaN Layers with Different Carbon Doping Concentration

High Mobility Algan/Gan Heterostructures Grown on Si Substrates Using A Large Lattice-Mismatch Induced Stress Control Technology

Identification of carbon location in p-type GaN: Synchrotron x-ray absorption spectroscopy and theory

Terrace Engineering of the Buffer Layer: Laying the Foundation of Thick GaN Drift Layer on Si Substrates

Record high electron mobilities in high-purity GaN by eliminating C-induced mobility collapse

Laser-Assisted Metalorganic Chemical Vapor Deposition of GaN

Low RF Loss and Low Dislocation Density of GaN Grown on High-Resistivity Si Substrates

Vacancy-engineering-induced dislocation inclination in III-nitrides on Si substrates

Suppression and Characterization of Interface States at Low-Pressure-chemical-vapor-deposited SiNx/III-nitride Heterostructures

Growth of high quality and uniformity AlGaN/GaN heterostructures on Si substrates using a single AlGaN layer with low Al composition

Effect of Carbon Impurity on the Dislocation Climb in Epitaxial GaN on Si Substrates

Coordinated Stress Management and Dislocation Control in GaN Growth on Si (111) Substrates by Using a Carbon Nanotube Mask.