Abstract:The development of gallium nitride (GaN) vertical-type metal-oxide-semiconductor field-effect transistors and p–i–n diode devices has gathered increasing attention. These devices require an n-type drift layer with a low doping level of 1016 cm−3 or less, minimized point defects inhibiting electron conduction, and a layer approximately 10 μm thick. Therefore, a practical method with a growth rate of at least several tens of μm/h and impurity concentrations of less than 1015 cm−3, except for that of dopants, is necessary. Halogen-free vapor-phase epitaxy (HF-VPE) has a high growth rate suitable for fabricating thick drift layers and utilizes a simple reaction between Ga vapor and ammonia gas (without a corrosive halogen gas), resulting in lower impurity levels. Herein, we eliminated the quartz content from the high-temperature zone to reduce the excess unintentional Si doping and identified that the nitrile gloves used for the growth preparation are other impurity contamination sources. We obtained a lightly n-type ([Si]=∼1016 cm−3) GaN layer, in which C, O, B, Fe, Mg, Al, Ca, Cr, Zn, Ni, Mn, and Ti impurity contents were below the detection limits of secondary ion mass spectrometry. Deep-level transient spectroscopy revealed that electron traps at EC − 0.26 and at EC − 0.59 eV were 2.7 × 1013 and 5.2 × 1014 cm−3, respectively. Moreover, the Hall effect analysis showed the acceptor-type defect-compensating donor content as approximately 2.7 × 1015 cm−3, resulting in a high electron mobility of HF-VPE GaN in the 30–710 K temperature range. Furthermore, we identified the Ca impurity as a deep acceptor, another killer defect leading to mobility collapse.

Record high electron mobilities in high-purity GaN by eliminating C-induced mobility collapse

High-mobility N−-Gan Drift Layer Grown on Si Substrates

High electron mobility in free-standing GaN substrates

High Mobility GaN Drift Layer on Si Substrates: the Role of Surface N Vacancy on Carbon Incorporation

Low field mobility in bulk GaN and its ternary AlGaN/GaN compounds (quantum kinetic approach)

Electrical transport in epitaxially grown undoped and Si-doped degenerate GaN films

Electron Mobility Exceeding 10(4) Cm(2)/Vs In An Algan-Gan Heterostructure Grown On A Sapphire Substrate

Identification of carbon location in p-type GaN: Synchrotron x-ray absorption spectroscopy and theory

Improved Channel Electron Mobility Through Electric Field Reduction in GaN Quantum-Well Double-Heterostructures

Effect of Carbon Impurity on the Dislocation Climb in Epitaxial GaN on Si Substrates

Ni Diffusion and Its Influence on Electrical Properties of AlxGa1−xN∕GaN Heterostructures

Impurity reduction in lightly doped n -type gallium nitride layer grown via halogen-free vapor-phase epitaxy

Defects in GaN Films Studied by Positron Annihilation Spectroscopy

Investigation of Defect Characteristics and Carrier Transport Mechanisms in GaN Layers with Different Carbon Doping Concentration

High Electron Mobility in Nearly-Dislocation-free Hexagonal InN

Impact of dislocations on the thermal conductivity of gallium nitride studied by time-domain thermoreflectance

Investigation of carbon-related complexes in highly C-doped GaN grown by metalorganic vapor phase epitaxy

Electron Mobility Calculations and Scattering Effects in GaN Compound Semiconductor

Migration of Carbon from Ga Sites to N Sites in GaN: a Combined PAS and Hybrid DFT Study

High-Electron-Mobility InN Layers Grown by Boundary-Temperature-Controlled Epitaxy