Abstract:Ammonia (NH3) is commonly used as group V precursor in gallium nitride (GaN) metalorganic chemical vapor deposition (MOCVD). The high background carbon (C) impurity in MOCVD GaN is related to the low pyrolysis efficiency of NH3, which represents one of the fundamental challenges hindering the development of high purity thick GaN for vertical high power device applications. This work uses a laser-assisted MOCVD (LA-MOCVD) growth technique to address the high-C issue in MOCVD GaN. Carbon dioxide (CO2) laser with wavelength of 9.219 um was utilized to facilitate NH3 decomposition via resonant vibrational excitation. The LA-MOCVD GaN growth rate (as high as 10 um/hr) shows a strong linear relationship with the trimethylgallium (TMGa) flow rate, indicating high effective V/III ratios and hence efficient NH3 decomposition. Pits-free surface morphology of LA-MOCVD GaN was demonstrated for films with growth rate as high as 8.5 um/hr. The background [C] in LA-MOCVD GaN films decreases monotonically as the laser power increases. A low [C] at 5.5E15 cm-3 was achieved in LA-MOCVD GaN film grown with the growth rate of 4 um/hr. Charge transport characterization of LA-MOCVD GaN films reveals high crystalline quality with room temperature mobility >1000 cm2/Vs. LA-MOCVD growth technique provides an enabling route to achieve high quality GaN epitaxy with low-C impurity and fast growth rate simultaneously. This technique can also be extended for epitaxy of other nitride-based semiconductors.

Influence of Growth Rate on the Carbon Contamination and Luminescence of GaN Grown on Silicon

High Mobility GaN Drift Layer on Si Substrates: the Role of Surface N Vacancy on Carbon Incorporation

Investigation On The Compensation Effect Of Residual Carbon Impurities In Low Temperature Grown Mg Doped Gan Films

Different Origins of the Yellow Luminescence in As-Grown High-Resistance GaN and Unintentional-Doped GaN Films

An Evidence of Defect Gettering in GaN

Enhancement of the Emission Efficiency of InGaN Films by Suppressing the Incorporation of Unintentional Gallium Atoms

Nature and Elimination of Yellow-Band Luminescence and Donor–acceptor Emission of Undoped GaN

Influence of residual carbon impurities in i-GaN layer on the performance of GaN-based p-i-n photodetectors

Carbon doping of GaN: Proof of the formation of electrically active tri-carbon defects

The Influence of V/III Ratio in the Initial Growth Stage on the Properties of GaN Epilayer Deposited on Low Temperature AlN Buffer Layer

Conductivity Enhancement in AlGaN:Mg by Suppressing the Incorporation of Carbon Impurity

Investigation of Defect Characteristics and Carrier Transport Mechanisms in GaN Layers with Different Carbon Doping Concentration

High-resistivity Unintentionally Carbon-Doped GaN Layers with Nitrogen As Nucleation Layer Carrier Gas Grown by Metal-Organic Chemical Vapor Deposition

Investigation of Oxygen Impurity in Different Growth Zones of GaN Crystal Grown by Na-flux Method

Current Status of Carbon‐Related Defect Luminescence in GaN

Carrier transport and luminescence properties of n-type GaN

The influence of temperature of nitridation and AlN buffer layer on N-polar GaN

Influence of Intrinsic or Extrinsic Doping on Charge State of Carbon and Its Interaction with Hydrogen in GaN

Optical Characteristics of C-Doped GaN

Laser-Assisted Metalorganic Chemical Vapor Deposition of GaN

Control of Residual Carbon Concentration in GaN High Electron Mobility Transistor and Realization of High-Resistance GaN Grown by Metal-Organic Chemical Vapor Deposition