Abstract:In this work, Gallium Arsenide (GaAs) films growth via Close Space Vapor Transport (CSVT) technique on n-type Silicon (Si) substrates (100) and its nitridation effect in the ammonia (NH3) environment is reported. The GaAs films were grown at 800, 900, and 1000 ∘C, and the nitridation process was carried out at 900 ∘C with an NH3:H2 gasses ratio. The GaAs films with and without nitridation process were analyzed using X-ray diffraction (XRD), Raman spectroscopy, Diffuse Reflectance Spectroscopy, and Scanning Electron Microscopy with Energy Dispersive X-ray analysis (SEM-EDX). Grazing incidence X-ray diffraction measurements of GaAs films nitrided confirm a polycrystalline GaN wurtzite structure with preferential orientation along (002), and additionality, a crystallographic plane (310) of low intensity is observed in 2θ=52.18∘ corresponding to Ga2O3. The average quantification results in weight (Wt. %) of GaAs films nitrided was determined by EDS; Ga∼79, N∼17.1, O∼2 and As∼1.8 Wt. %. The presence of GaN, GaxOy, Si, and GaAs modes were found by Raman measurements, demonstrating a partial nitriding. The band gap estimation by diffuse reflectance was between 3.2 and 3.38 eV such values are close to that reported for bulk GaN (3.4 eV). The presence of oxygen in the structure could be related to substrates or the GaAs source.

NITRIDATION OF K/GaAs(100) SURFACES

Nitridation of GaAs surfaces stimulated by nitrogen glow discharge

Nitridation of GaAs(001) Using N2-RF Plasma

Photoemission study of K on GaAs(100) and InP(100) surfaces with synchrotron radiation

Photoemission Study of Chemisorption and Fermi-level Pinning at K/GaAs(1 0 0) Interface with Synchrotron Radiation

Spatially resolved electronic structure of an isovalent nitrogen center in GaAs

Photoemission Studies of K-Promoted Nitridation of InP(100) Surface Using Synchrotron Radiation

Study of Nitridation Effect on Structural, Morphological, and Optical Properties of GaAs Film Growth on Silicon Substrates via Close Space Vapor Transport Technique

N-nH complexes in GaAs studied at the atomic scale by cross-sectional scanning tunneling microscopy

Anisotropic Spectroscopy of Nitrogen K-edge in Group-Iii Nitrides

Photon-induced nitridation of GaAs surface at room temperature

K promoted oxidation and nitridation on InP(100) surface: A soft-X-ray photoemission study

Effects of Substrate and N Content on the Growth of the Mid-Infrared Dilute Nitride InAsN Alloy

Effect of Rapid Thermal Annealing on Behavior of Nitrogen in GaAsN Alloys

Molecular-beam-epitaxy Growth of GaN on GaAs(100) by Using Reactive Nitrogen Source

Si[sub 3]N[sub 4] on GaAs by direct electron cyclotron resonance plasma assisted nitridation of Si layer in Si/GaAs structure

Study on influence of Na on nitridation of InP (100) surface at room temperature by synchrotron radiation photoemission spectroscopy

Characterization of Molecular Nitrogen in III-V Compound Semiconductors by Near-Edge X-Ray Absorption Fine Structure and Photoemission Spectroscopies

Growth and Characterization of InAsN/GaAs Dilute Nitride Semiconductor Alloys for the Midinfrared Spectral Range

Vacuum Nanotechnology. Synthesis of New Materials and Characterization of Surfaces and Interfaces. Atomically-Flat GaAs(001) Surface Achieved by Atomic-Hydrogen Treatment and MBE Growth of Purely Cubic-Phase GaN.

The effect of the first GaN monolayer on the nitridation damage of molecular beam epitaxy grown GaN on GaAs(001)