Abstract:Lattice matched n-type AlInP(100) charge selective contacts are commonly grown on n-p GaInP(100) top absorbers in high-efficiency III-V multijunction solar or photoelectrochemical cells. The cell performance can be greatly limited by the electron selectivity and valance band offset at this heterointerface. Understanding of the atomic and electronic properties of the GaInP/AlInP heterointerface is crucial for the reduction of photocurrent losses in III-V multijunction devices. In our paper, we investigated chemical composition and electronic properties of n-GaInP/n-AlInP heterostructures by X-ray photoelectron spectroscopy (XPS). To mimic an in-situ interface experiment with in-situ stepwise deposition of the contact material, 1 nm - 50 nm thick n-AlInP(100) epitaxial layers were grown on n-GaInP(100) buffer layer on n-GaAs(100) substrates by metal organic vapor phase epitaxy. We observed (2x2)/c(4x2) low-energy electron diffraction patterns with characteristic diffuse streaks along the [01-1] direction due to P-P dimers on both AlInP(100) and GaInP(100) as-prepared surfaces. Atomic composition analysis confirmed P-rich termination on both surfaces. Angle-resolved XPS measurements revealed a surface core level shift of 0.9 eV in P 2p peaks and the absence of interface core level shifts. We assigned the surface chemical shift in the P2p spectrum to P-P bonds on a surface. We found an upward surface band bending on the (2x2)/c(4x2) surfaces most probably caused by localized mid-gap electronic states. Pinning of the Fermi level by localized electronic states remained in n-GaInP/n-AlInP heterostructures. A valence band offset of 0.2 eV was derived by XPS and band alignment diagram models for the n-n junctions were suggested.

Synchrotron Radiation Photoemission Study of the Electronic Structure of the Ultrathin K/AIN Interface

Photoemission study of K on GaAs(100) and InP(100) surfaces with synchrotron radiation

Photoemission Study of Chemisorption and Fermi-level Pinning at K/GaAs(1 0 0) Interface with Synchrotron Radiation

Synchrotron Radiation Photoemission Spectrum Study on K_3C_(60) Film

Photoemission Studies of K-Promoted Nitridation of InP(100) Surface Using Synchrotron Radiation

High-Resolution Angle-Resolved Photoemission Study of the Al(100) Single Crystal

Study Of The Na-Si(111) 3x1 Interface Using Core-Level Photoemission Spectroscopy

In-adlayers on Non-Polar and Polar InN Surfaces: Ion Scattering and Photoemission Studies

Study on influence of Na on nitridation of InP (100) surface at room temperature by synchrotron radiation photoemission spectroscopy

NITRIDATION OF K/GaAs(100) SURFACES

Synchrotron radiation photoemission study of potassium-promoted oxidation of InP(100) surface

Photoreflectance Study Of N- And Sb-Related Modifications Of The Energy Gap And Spin-Orbit Splitting In Innassb Alloys

Nanostructures for in-situ surface-enhanced Kretschmann-Raether ellipsometry

Ultrafast low-energy photoelectron diffraction for the study of surface-adsorbate interactions with 100 femtosecond temporal resolution

Photoinduced electron transfer at a Si(111) nanostructured surface: effect of varying light wavelength, temperature, and structural parameters

Synchrotron Radiation Photoemission-Study of the Formation of the Ag/Gasb(110) Interface

A theoretical study of vibronic coupling in the photoelectron spectra of Al6N

Band energy diagrams of n-GaInP/n-AlInP(100) surfaces and heterointerfaces studied by X-ray photoelectron spectroscopy

Synchrotron radiation studies on metal/semiconductor interface electronic structures

Ultrafast dynamics of electronic structure in InN thin film

K promoted oxidation and nitridation on InP(100) surface: A soft-X-ray photoemission study