Abstract:Interband photoluminescence (PL) and absorption spectra of n-InN samples with Hall concentrations from 3.6 X 10(17) to 6 X 10(18) cm(-3) were studied. Sample thicknesses were in the range from 12 to 0.47 mu m. A set of lasers for the PL excitation in the energy range from 2.41 down to 0.81 eV was used. The well-resolved structure consisting of three peaks was observed in the PL spectra of the high-quality samples in the energy interval from 0.50 to 0.67 eV at liquid-helium and nitrogen temperatures. We attributed one of two low-energy features of the spectra to the recombination of degenerate electrons with the holes trapped by deep acceptors with a binding energy of E-da=0.050-0.055 eV, and the other one was attributed to the LO-phonon replica of this band. The higher-energy PL peak is considered as a complex band formed by two mechanisms. The first one is related to the transitions of electrons to the states of shallow acceptors with a binding energy of E-sh=0.005-0.010 eV and/or to the states of the Urbach tail populated by photoholes. The second mechanism contributing to this band is the band-to-band recombination of free holes and electrons. The relative intensities of the two higher-energy PL peaks were found to be strongly dependent on temperature and excitation power. A model approach taking into account the Urbach tails of conduction and valence bands and the acceptor states was developed. The calculations of PL and the absorption spectra have shown that the band gap of InN in the limit of zero temperature and zero electron concentration is close to 0.665-0.670 eV. The model calculations allowed us to explain the structures of all the spectra observed, their dependence on the excitation power, and the temperature variations of PL and the absorption spectra. The effective masses of electrons at the Gamma point equal to 0,042 and 0.07 of free-electron mass were tested in calculations. The conductivity band was assumed to be nonparabolic.

The Influence of Conduction Band Plasmons on Core-Level Photoemission Spectra of Inn

Acceptor States in the Photoluminescence Spectra of N-Inn

Photoluminescence of N‐inn with Low Electron Concentrations

Effect of Electron Distribution in InN Films on Infrared Reflectance Spectrum of Longitudinal Optical Phonon-Plasmon Interaction Region

In-adlayers on Non-Polar and Polar InN Surfaces: Ion Scattering and Photoemission Studies

Valence Band Density of States of Zinc-Blende and Wurtzite InN from X-Ray Photoemission Spectroscopy and First-Principles Calculations

Analysis of Nonradiative Carrier Recombination Processes in InN Films by Mid-infrared Spectroscopy

Surface-plasmon resonances in indium nitride with metal-enriched nano-particles

Manifestation of the equilibrium hole distribution in photoluminescence of n-InN

Effects of Electron Concentration on the Optical Absorption Edge of InN

Determination of the Branch-Point Energy of InN: Chemical Trends in Common-Cation and Common-Anion Semiconductors

Effects Of The Narrow Band Gap On The Properties Of Inn

Resonant Localized Donor State above the Conduction Band Minimum in InN

Energy-Dependent Time-Resolved Photoluminescence of Self-Catalyzed InN Nanocolumns

Study on the Photoluminescence Properties of Inn Films

Carrier Recombination, Relaxation, and Transport Dynamics in InN

Observation Of Nonequilibrium Longitudinal Optical Phonons In Inn And Its Implications

Influence of Strain on the Band Gap Energy of Wurtzite InN

Bandtail Characteristics in InN Thin Films

Identification of the Main Contributions to the Conductivity of Epitaxial InN

In Adlayers on C-Plane Inn Surfaces: A Polarity-Dependent Study by X-Ray Photoemission Spectroscopy