Abstract:Effects of rapid thermal annealing (RTA) on the structural properties were investigated in undoped GaN film grown by rf-plasma-assisted molecular beam epitaxy (MBE). Detailed characterizations of the photoluminescence (PL), high-resolution X-ray diffraction and low-frequency noise were conducted on both the as-grown and annealed films. PL and X-ray diffraction measurements showed that the crystallinity of the films improved with RTA at 800 degreesC with significant reduction in the yellow emission. Annealing at 900 degreesC and 1000 degreesC resulted in an increase in the FWHM of the Ti-ray diffraction, indicative of thermal decomposition of the materials. The results are in excellent agreement with our study of low-frequency noise, which demonstrates similar trend in the magnitudes of the Hooge parameters as a function of the annealing temperature, The temperature dependence of the voltage noise power spectra S-nu(f) was examined from 400 K to 80 K in the frequency range between 30 Hz and 100 kHz, At the low-frequency range the fluctuation is dominated by 1/f(gamma) noise, and for f > 1 kHz the noise is dominated by G-R noise processes. Our experimental results show that 800 degreesC is the optimal temperature for RTA, which results in substantial improvements in both the optical, structural and noise properties for the material, whereas annealing at 1000 degreesC is found to result in significant material degradation.

Influence of Rapid Thermal Annealing on the Distribution of Nitrogen Atoms in GaAsN/GaAs

Effect of Rapid Thermal Annealing on Behavior of Nitrogen in GaAsN Alloys

Strain Enhancement During Annealing of Gaasn Alloys

Study of Nitridation Effect on Structural, Morphological, and Optical Properties of GaAs Film Growth on Silicon Substrates via Close Space Vapor Transport Technique

Rapid Thermal Annealing Effect on Gaasbi/Gaas Single Quantum Wells Grown by Molecular Beam Epitaxy

Effects of Rapid Thermal Annealing on the Structural Properties of GaN Thin Films

Thermal Nitridation Kinetics of Silicon Wafers in Nitrogen Atmosphere During Annealing

Defects in GaN Films Studied by Positron Annihilation Spectroscopy

A systematic study of spin-dependent recombination in GaAs$_{1-x}$N$_x$ as a function of nitrogen content

Effect of rapid thermal annealing on InGaAs/GaAs quantum wells

Ni Diffusion and Its Influence on Electrical Properties of AlxGa1−xN∕GaN Heterostructures

Effect of Annealing on Thermal Expansion Behavior of Free-Standing GaN

Nitrogen local electronic structure in Ga(In)AsN alloys by soft-x-ray absorption and emission: Implications for optical properties

Effects of Rapid Thermal Annealing on the Intersubband Energy Spacing of Self-Assembled InAs/Gaas Quantum Dots

Effects of Rapid Thermal Annealing on Self-Assembled InGaAs/GaAs Quantum Dots Superlattice

Study of the Effects of Rapid Thermal Annealing in Generation–recombination Noise in MBE Grown GaN Thin Films

Onset of tetrahedral interstitial formation in GaAsN alloys

Spatially resolved electronic structure of an isovalent nitrogen center in GaAs

Influence of Annealing Atmosphere on the Structure, Morphology and Transmittance of N-Incorporated Ga2o3 Films

In(AsN) Mid-Infrared Emission Enhanced by Rapid Thermal Annealing

N-nH complexes in GaAs studied at the atomic scale by cross-sectional scanning tunneling microscopy