Histochemical demonstration of phosphatases in the central nervous system of the rat.

G. Bourne

IF: 4.145

Experimental Cell Research

Abstract:

What problem does this paper attempt to address?

NO2 adsorption on GaN surface and its interaction with the yellow-luminescence-associated surface state

Yury Turkulets,Nitzan Shauloff,Or Haim Chaulker,Raz Jelinek,Ilan Shalish

2024-05-10

Abstract:Trapping of charge at surface states is a longstanding problem in GaN that hinders a full realization of its potential as a semiconductor for microelectronics. At least part of this charge originates in molecules adsorbed on the GaN surface. Multiple studies have addressed the adsorption of different substances, but the role of adsorbents in the charge-trapping mechanism remains unclear. Here, we show that the GaN surface selectively adsorbs nitrogen dioxide (NO2) existing in the air in trace amounts. NO2 appears to charge the yellow-luminescence-related surface state. Mild heat treatment in vacuum removes this surface charge, only to be re-absorbed on re-exposure to air. Selective exposure of vacuum-annealed GaN to NO2 reproduces a similar surface charge distribution, as does the exposure to air. Residual gas analysis of the gases desorbed during heat treatment in vacuum shows a large concentration of nitric oxide (NO) released from the surface. These observations suggest that NO2 is selectively adsorbed from the air, deleteriously affecting the electrical properties of air-exposed GaN. The trapping of free electrons as part of the NO2chemisorption process changes the surface charge density, resulting in a change in the surface band bending. Uncontrollable by nature, NO2 adsorption may significantly affect any GaN-based electronic device. However, as shown here, a rather mild heat treatment in vacuum restores the surface state occupancy of GaN to its intrinsic state. If attempted before passivation, this heat treatment may provide a possible solution to longstanding stability problems associated with surface charge trapping in GaN-based devices.

Materials Science,Applied Physics
The GaN yellow-luminescence-related surface state and its interaction with air

Yury Turkulets,Nitzan Shauloff,Or Haim Chaulker,Yoram Shapira,Raz Jelinek,Ilan Shalish

DOI: https://doi.org/10.1016/j.surfin.2023.102834

2022-08-26

Abstract:Yellow luminescence (YL) is probably the longest and most studied defect-related luminescence band in GaN, yet its electronic structure or chemical identity remain unclear. Most of the theoretical work so far has attributed the feature to bulk defects, whereas spectroscopic studies have suggested a surface origin. Here, we apply deep level spectroscopy using sub-bandgap surface photovoltage that provides the energy distribution of the surface charge density. Comparison of surface charge spectra obtained under identical conditions before and after various surface treatments reveals the dynamics of the surface charge density. Further comparison with spectra of the entire state obtained using photoluminescence shows how the charge density stored in YL-related defects is eliminated upon a mild anneal in vacuum. This suggests that the YL-related defect involves a certain molecule adsorbed on the GaN surface, possibly in a complex with an intrinsic surface defect. The observed interaction with air strongly indicates that the YL-related deep level is a surface state.

Materials Science
Adsorption and desorption of hydrogen at nonpolar GaN(1-100) surfaces: Kinetics and impact on surface vibrational and electronic properties

L. Lymperakis,J. Neugebauer,M. Himmerlich,S. Krischok,M. Rink,J. Kröger,V. M. Polyakov

DOI: https://doi.org/10.1103/PhysRevB.95.195314

2017-02-03

Abstract:The adsorption of hydrogen at nonpolar GaN(1-100) surfaces and its impact on the electronic and vibrational properties is investigated using surface electron spectroscopy in combination with density functional theory (DFT) calculations. For the surface mediated dissociation of H2 and the subsequent adsorption of H, an energy barrier of 0.55 eV has to be overcome. The calculated kinetic surface phase diagram indicates that the reaction is kinetically hindered at low pressures and low temperatures. At higher temperatures ab-initio thermodynamics show, that the H-free surface is energetically favored. To validate these theoretical predictions experiments at room temperature and under ultrahigh vacuum conditions were performed. They reveal that molecular hydrogen does not dissociatively adsorb at the GaN(1-100) surface. Only activated atomic hydrogen atoms attach to the surface. At temperatures above 820 K, the attached hydrogen gets desorbed. The adsorbed hydrogen atoms saturate the dangling bonds of the gallium and nitrogen surface atoms and result in an inversion of the Ga-N surface dimer buckling. The signatures of the Ga-H and N-H vibrational modes on the H-covered surface have experimentally been identified and are in good agreement with the DFT calculations of the surface phonon modes. Both theory and experiment show that H adsorption results in a removal of occupied and unoccupied intragap electron states of the clean GaN(1-100) surface and a reduction of the surface upward band bending by 0.4 eV. The latter mechanism largely reduces surface electron depletion.

Materials Science
From powder to nanowire: A simple and environmentally friendly strategy for optical and electrical GaN nanowire films

Yuqing Wang,Ruzhi Wang,Yujie Li,Yuefei Zhang,Mankang Zhu,Biben Wang,Hui Yan

DOI: https://doi.org/10.1039/c2ce26555a

IF: 3.756

2013-01-01

CrystEngComm

Abstract:Gallium nitride nanowires (GaN NWs) were successfully grown on silicon substrates deposited with a thin gold film by plasma-assisted hot filament chemical vapor deposition (CVD), where GaN powder was used as the Ga source and nitrogen and hydrogen gases were used for the reactive gases. The diameters of synthesized GaN NWs are in a range of 40-150 nm and the lengths of some of the NWs are up to over 10 mu m. The GaN NWs crystallize in a wurtzite structure and they are grown in alignment or bending modes depending on the growth conditions. The photoluminescence spectra exhibit five emission bands at about 379, 396, 467, 481 and 491 nm, which are related to the band edge emission, defects and impurities of GaN NWs, respectively. Furthermore, the excellent field emission (FE) properties of GaN NWs were observed, and the FE results reveal that the GaN NWs have a low turn-on field of 1.66 V mu m(-1). It supplies a simple strategy to prepare GaN NW films for optical and electrical applications.
Passivation of Surface States in GaN by NiO Particles

Martin Velazquez-Rizo,Pavel Kirilenko,Daisuke Iida,Zhe Zhuang,Kazuhiro Ohkawa

DOI: https://doi.org/10.3390/cryst12020211

IF: 2.7

2022-01-01

Crystals

Abstract:GaN and NiO/GaN electrodes were characterized by impedance spectroscopy measurements in 0.1 M NaOH. We observed the suppression of the surface states capacitance due to the modification of the chemical state of superficial Ga atoms by NiO. This result suggests that the carriers involved in the photocorrosion of GaN in alkaline conditions originate in its surface states. In addition, we characterized the epitaxial relationship between the NiO particles deposited on GaN by transmission electron microscopy, finding the NiO{111}||GaN{0002} and NiO[220] ||GaN[112¯0] symmetry constraints.
Different Origins of the Yellow Luminescence in As-Grown High-Resistance GaN and Unintentional-Doped GaN Films

F. J. Xu,B. Shen,L. Lu,Z. L. Miao,J. Song,Z. J. Yang,G. Y. Zhang,X. P. Hao,B. Y. Wang,X. Q. Shen,H. Okumura

DOI: https://doi.org/10.1063/1.3294965

IF: 2.877

2010-01-01

Journal of Applied Physics

Abstract:The yellow luminescence (YL) in as-grown high-resistance (HR) and unintentional-doped (UID) GaN films grown by metal organic chemical vapor deposition has been investigated by means of photoluminescence and monoenergetic positron annihilation spectroscopy. It is found there is stronger YL in UID-GaN with higher concentration of gallium vacancy (VGa), suggesting that VGa-involved defects are the origin responsible for the YL in UID-GaN. Contrastly, there is much stronger YL in HR-GaN that is nearly free from VGa, suggesting that there is another origin for the YL in HR-GaN, which is thought as the carbon-involved defects. Furthermore, it is found that the HR-GaN film with shorter positron diffusion length Ld exhibits stronger YL. It is suggested that the increased wave function overlap of electrons and holes induced by the extremely strong space localization effect of holes deduced from the short Ld is the vital factor to enhance the YL efficiency in HR-GaN.
General aspects of the vapor growth of semiconductor crystals - a study based on DFT simulations of the NH3/NH2 covered GaN(0001) surface in hydrogen ambient

Pawel Kempisty,Pawel Strak,Konrad Sakowski,Stanislaw Krukowski

DOI: https://doi.org/10.1016/j.jcrysgro.2013.12.039

2013-11-20

Abstract:Vapor growth of semiconductors is analyzed using recently obtained dependence of the adsorption energy on the electron charge transfer between the surface adsorbed species and the bulk [Krukowski et al. J. Appl. Phys. 114 (2013) 063507, Kempisty et al. ArXiv <a class="link-https" data-arxiv-id="1307.5778" href="https://arxiv.org/abs/1307.5778">1307.5778</a> (2013)]. Ab initio calculations were performed to study the physical properties of GaN(0001) surface in ammonia-rich conditions, i.e. covered by mixture of NH3 molecules and NH2 radicals. The Fermi level is pinned at valence band maximum (VBM) and conduction band minimum (CBM) for full coverage by NH3 molecules and NH2 radicals, respectively. For the crossover content of ammonia of about 25% monolayer (ML), the Fermi level is unpinned. It was shown that hydrogen adsorption energy depends on the doping in the bulk for the unpinned Fermi level, i.e. for this coverage. Surface structure thermodynamic and mechanical stability criteria are defined and compared. Mechanical stability of the coverage of such surfaces was checked by determination of the desorption energy of hydrogen molecules. Thermodynamic stability analysis indicates that initally equilibrium hydrogen vapor partial pressure steeply increases with NH3 content to attain the crossover NH3/NH2 coverage, i.e. the unpinned Fermi level condition. For such condition the entire range of experimentally accessible pressures belongs showing that vapor growth of semiconductor crystals occurs predominantly for unpinned Fermi level at the surface, i.e. for flat bands. Accordingly, adsorption energy of most species depends on the doping in the bulk that is basis of the possible molecular scenario explaining dependence of the growth and the doping of semiconductor crystals on the doping in the bulk

Materials Science
Formation and Applications in Electronic Devices of Lattice‐Aligned Gallium Oxynitride Nanolayer on Gallium Nitride

Junting Chen,Junlei Zhao,Sirui Feng,Li Zhang,Yan Cheng,Hang Liao,Zheyang Zheng,Xiaolong Chen,Zhen Gao,Kevin J. Chen,Mengyuan Hua

DOI: https://doi.org/10.1002/adma.202208960

IF: 29.4

2023-01-09

Advanced Materials

Abstract:Gallium nitride (GaN), a promising alternative semiconductor to Si, is widely used in photoelectronic and electronic technologies. However, the vulnerability of the GaN surface is a critical restriction that hinders the development of GaN‐based devices, especially in terms of device stability and reliability. In this study, this challenge was overcome by converting the GaN surface into a gallium oxynitride (GaON) epitaxial nanolayer through an in‐situ two‐step "oxidation–reconfiguration" process. The O plasma treatment overcomes the chemical inertness of the GaN surface, and sequential thermal annealing manipulates the kinetic–thermodynamic reaction pathways to create a metastable GaON nanolayer with a wurtzite lattice. The GaN‐derived GaON nanolayer is a tailored structure for surface reinforcement and possesses several advantages, including a wide bandgap, high thermodynamic stability, and large valence band offset with a GaN substrate. These physical properties can be further leveraged to enhance the performance of GaN‐based devices in various applications, such as power systems, complementary logic integrated circuits, photoelectrochemical water splitting, and ultraviolet photoelectric conversion. This article is protected by copyright. All rights reserved

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology
Nature and Elimination of Yellow-Band Luminescence and Donor–acceptor Emission of Undoped GaN

G Li,SJ Chua,SJ Xu,W Wang,P Li,B Beaumont,P Gibart

DOI: https://doi.org/10.1063/1.124025

IF: 4

1999-01-01

Applied Physics Letters

Abstract:The nature of yellow-band luminescence (YL) and donor–acceptor (DA) emissions of undoped GaN grown on sapphire or laterally overgrown on patterned Si3N4 was investigated using low-temperature photoluminescence and spatially resolved photoluminescence. The states, producing the levels responsible for the YL and DA emissions, arise from complexes of extended defects and native-point defects (most likely Ga vacancies) or impurities (such as carbon). For GaN directly grown on a low-temperature-grown GaN buffer layer, the YL and DA emissions can be eliminated by simply increasing the buffer-layer growth temperature as the result of enlarging hexagonal crystallites, and consequently, reducing the density of extended defects. For laterally overgrown GaN, a much lower density of extended defects substantially suppresses the YL emission.
Defects in GaN Films Studied by Positron Annihilation Spectroscopy

XD Pi,PG Coleman,CL Tseng,CP Burrows,B Yavich,WN Wang

DOI: https://doi.org/10.1088/0953-8984/14/12/102

2002-01-01

Journal of Physics Condensed Matter

Abstract:The annealing of n-type thin GaN films grown by metal-organic chemical vapour deposition in vacuum has been studied by beam-based positron annihilation spectroscopy. The results are consistent with a model in which Ga vacancies (V-Ga) exist alongside dislocations and are stable up to 900degreesC. It is suggested that dislocations are shallow positron traps. Upon annealing at,less than or equal to500degreesC the decrease of dislocation density increases the effective positron diffusion length (L+eff) and the probability of trapping at V-Ga. While L+eff continues to change, the trapping of positrons at V-Ga is saturated upon annealing above 500degreesC. The formation of N vacancies near the surface at high temperatures is considered to introduce a potential that retards positron back-diffusion. At 900degreesC dissociation of GaN at a rate of similar to5 nm s(-1) is observed. Oxygen clusters, stable up to 900degreesC, appear to exist near the interface between the GaN film and the sapphire substrate.
Pulsed N2 Plasma Surface Treatment for AlGaN/GaN HEMTs Prior to PECVD SiNx Passivation to Reduce Plasma Damage

Kaiyu Wang,Ke Wei,Ruizhe Zhang,Sheng Zhang,Jiaqi Guo,Xiaoqiang He,Jianchao Wang,Sen Huang,Yingkui Zheng,Xiaojuan Chen,Xinhua Wang,Xinyu Liu

DOI: https://doi.org/10.1063/5.0235740

IF: 4

2024-01-01

Applied Physics Letters

Abstract:In this work, a pulse-mode N2 plasma surface treatment process was proposed as a means of reducing plasma damage and improving the GaN/GaOx ratio on the surface before SiNx deposition, which further contributes to an enhanced density of 2DEG and a reduced sheet resistance. With the pulsed N2 plasma surface treatment combined with subsequent SiNx passivation, the fabricated GaN HEMTs exhibit negligible current collapse and suppressed leakage current. The improved behavior is attributed to the fact that the pulsed N2 plasma is capable of nitriding the surface and removing carbon contaminants as identified through x-ray photoelectron spectroscopy and energy dispersive x-ray spectroscopy. Compared to the traditional continuous-wave-mode N2 plasma, the pulsed N2 plasma pre-treatment effectively prevents continuous collisions of the plasma during acceleration, thereby significantly reducing plasma damage. This work offers valuable insights for surface treatment processes in micro- and nanofabrication.
Adsorption of Gas Molecules on Graphene Nanoribbons and Its Implication for Nanoscale Molecule Sensor

Bing Huang,Zuanyi Li,Zhirong Liu,Gang Zhou,Shaogang Hao,Jian Wu,Bing-Lin Gu,Wenhui Duan

DOI: https://doi.org/10.1021/jp8021024

2008-01-01

Abstract:We have studied the adsorption of gas molecules (CO, NO, NO2, O-2, N-2, CO2, and NH3) on graphene nanoribbons (GNRs) using first principles methods. The adsorption geometries, adsorption energies, charge transfer, and electronic band structures are obtained. We find that the electronic and transport properties of the GNR with an-nchair-shaped edges are sensitive to the adsorption of NH3, and the system exhibits n-type semiconducting behavior after NH3 adsorption. Other gas molecules have little effect on modifying the conductance of GNRs. Quantum transport calculations further indicate that NH3 molecules can be detected out of these gas molecules by the GNR-based sensor.
Surface chemistry in Atomic Layer Deposition of Gallium Nitride from Triethylgallium and Ammonia studied by mass spectroscopy

Henrik Pedersen,Houyem Hafdi,Pamburayi Mpofu,Alex Moberg Byam

DOI: https://doi.org/10.26434/chemrxiv-2024-v430f

2024-11-25

Abstract:Gallium nitride (GaN) is a commonly used semiconductor owing to its high chemical and thermal stability, which makes it suitable for various applications in modern electronics. GaN film deposition is favored by atomic layer deposition (ALD) with triethylgallium (TEG) and ammonia (NH3) plasma as precursors. However, the surface reaction pathways of TEG under ALD conditions have not been experimentally evaluated. In this study, the surface chemistry of GaN films deposited on Si (100) during ALD with TEG and NH3 with and without plasma activation as precursors was investigated using mass spectrometry. The results suggest that the surface chemistry of the deposition process mainly consists of ethyl ligand elimination upon the TEG pulse, followed by ligand exchange during NH3 pulsing to form ethane (C2H6) as a reaction by-product on an NH2-terminated surface.

Chemistry
Comparison of the structure and optoelectronic properties of NO-adsorbed two-dimensional GaN with planar and hydrogenated structure

Jian Tian,Lei Liu,Feifei Lu

DOI: https://doi.org/10.1016/j.mssp.2021.106436

IF: 4.1

2022-04-01

Materials Science in Semiconductor Processing

Abstract:This article investigates the difference between NO-absorbed planar and hydrogenated two-dimensional (2D) GaN under different adsorption conditions via first principles. The structure, stability, charge transfer, band structure, density of states and optical properties are analyzed in detail. Our results reveal that the NO shifts to Ga atom for planar 2D GaN and shifts to N atom for hydrogenated 2D GaN when NO is adsorbed perpendicular on two-dimensional GaN plane. Planar 2D GaN transmits electrons to NO while hydrogenated 2D GaN obtains electrons. Band structure and DOS show that there are two new impurity levels appear near CBM in spin-up band, which originated from hybridization of N p-orbitals and O p-orbitals in NO. The results indicate that NO-adsorbed 2D GaN possesses magnetic behaviors and magnetic moments of system are all from NO molecule. Stronger stability, lager charge transfer and bigger conductivity change make 2D GaN with planar structure be more sensitive for NO molecule, which can be used as NO gas sensors. Compared with planar 2D GaN, NO-adsorbed hydrogenated 2D GaN has better light absorption performance. In addition, changing adsorption method will significantly change characteristics of planar two-dimensional GaN.

engineering, electrical & electronic,materials science, multidisciplinary,physics, condensed matter, applied
Mechanism of yellow luminescence in GaN at room temperature

M. Matys,B. Adamowicz

DOI: https://doi.org/10.1063/1.4975116

IF: 2.877

2017-02-14

Journal of Applied Physics

Abstract:We investigated the excitation intensity (Φ) dependent photoluminescence (PL), at room temperature (RT), from GaN-based metal-insulator-semiconductor structures under gate bias (VG) from accumulation to deep depletion resulting in variations of the space charge region width. We found that depending on VG, different Φ-dependencies of the YL band energy position (blueshift or redshift), shape (band enlargement or narrowing) and intensity (signal saturation) can be obtained. In order to explain such an unusual YL behavior, we developed a phenomenological PL model, which is based on the solution of the three-dimensional Poisson's equation, current continuity equations and rate equations, and which takes into account the grain structure of GaN layers and the contribution of interface regions into recombination processes. Our model reproduced well the experimental Φ-dependencies of the YL band intensity. It also predicts that YL arises from the donor-acceptor pair (DAP) recombination in very limited areas (width of several nanometers) inside the depletion regions related to grain/grain interfaces and external crystal surfaces. On this basis, we showed that VG-controlled Φ-dependencies of the YL peak position and shape, can be well explained if we assume that YL is due to DAP-type transitions, in which the final state consists of the Coulomb interaction and strong interaction between the dipole moment of ionized DAP and the depletion region electric field. This recombination mechanism can play a significant role at RT, but should be negligible at low temperatures, where one can expect the significant reduction of interface barriers under illumination.

physics, applied
Adsorption of CO and NO molecules on pristine, vacancy defected and doped graphene-like GaN monolayer: A first-principles study

Han-Fei Li,Si-Qi Li,Guo-Xiang Chen

2023-06-05

Abstract:In order to study the novel gas detection or sensing applications of gallium nitride monolayer (GaN-ML), we mainly focused on the structural, energetic, electronic and magnetic properties of toxic gas molecules (CO, NO) adsorbed on pristine, single vacancy (N-vacancy, Ga-vacancy) defected, and metals (Al, Fe, Pd and Pt) doped GaN-ML using density functional theory (DFT-D2 method) in this work. The calculations demonstrate that pristine GaN-ML is extremely insensitive to CO and NO together with the existence of a weak physisorption nature due to small adsorption energy, charge transfer, and long adsorption distance. It is found that both N-vacancy defected GaN-ML and Fe-doped GaN-ML can significantly increase the adsorption energy and charge transfer for CO. The CO adsorption induces the metallic characteristics of N-vacancy GaN-ML to be converted to the half-metallic characteristics together with 100% spin polarization, and it also drastically changes the magnetic moment, implying that N-vacancy GaN-ML exhibits excellent sensitivity to CO. However, Fe-doped GaN-ML is not conducive to CO detection. Moreover, N-vacancy defected and Pt-doped GaN-ML greatly improve the adsorption ability for NO compared to other substrates, and the presence of stronger orbital hybridization suggests that the interaction between them is chemisorption. Therefore, N-vacancy defected GaN-ML and Pt-doped GaN-ML can serve as potential materials in future NO sensing devices.

Materials Science
Electronic properties of air-exposed GaN$(1\bar{1}00)$ and $(0001)$ surfaces after several device processing compatible cleaning steps

Thomas Auzelle,Florian Ullrich,Sebastian Hietzschold,Stefan Brackmann,Sabina Hillebrandt,Wolfgang Kowalsky,Eric Mankel,Robert Lovrincic,Sergio Fernández-Garrido

DOI: https://doi.org/10.48550/arXiv.1908.03376

2019-08-09

Applied Physics

Abstract:We report on the electronic properties of GaN$(1\bar{1}00)$ and $(0001)$ surfaces after three different and subsequent device processing compatible cleaning steps: HCl etching, annealing at $400$ $^\circ$C in N$_2$ atmosphere, and O$_2$ plasma exposure. The surface electronic properties are quantified, in the dark and under ultraviolet illumination, using X-ray photoelectron spectroscopy and a Kelvin probe. We find that the cleaning steps largely affect the work function and the band bending of both GaN orientations. These modifications are attributed to the presence of different surface states as well as to the formation of adsorbates building up distinct surface dipoles. Besides these results, we detect that under ultraviolet illumination the work function of the surfaces exposed to HCl decreases by at least $0.2$ eV without screening of the band bending. We thus attribute the observed surface photovoltage to a photo-induced modification of the surface dipole. Overall, these results emphasize the strong dependence of the electronic properties of air-exposed GaN surfaces on adsorbates. As a result, we advocate the use of the common cleaning steps analyzed here to re-initialize at will GaN$(1\bar{1}00)$ and $(0001)$ surfaces into pre-defined states.
Lattice-aligned gallium oxynitride nanolayer for GaN surface enhancement and function extension

Junting Chen,Junlei Zhao,Sirui Feng,Li Zhang,Yan Cheng,Hang Liao,Zheyang Zheng,Xiaolong Chen,Zhen Gao,Kevin J. Chen,Mengyuan Hua

DOI: https://doi.org/10.48550/arXiv.2209.13826

2022-09-28

Abstract:Gallium nitride (GaN), as a promising alternative semiconductor to silicon, is of well-established use in photoelectronic and electronic technology. However, the vulnerable GaN surface has been a critical restriction that hinders the development of GaN-based devices, especially regarding device stability and reliability. Here, we overcome this challenge by converting the GaN surface into a gallium oxynitride (GaON) epitaxial nanolayer through an in-situ two-step "oxidation-reconfiguration" process. The oxygen plasma treatment overcomes the chemical inertness of the GaN surface, and the sequential thermal annealing manipulates the kinetic-thermodynamic reaction pathways to create a metastable GaON nanolayer with wurtzite lattice. This GaN-derived GaON nanolayer is a tailored structure for surface reinforcement and possesses several advantages, including wide bandgap, high thermodynamic stability, and large valence band offset with GaN substrate. These enhanced physical properties can be further leveraged to enable GaN-based applications in new scenarios, such as complementary logic integrated circuits, photoelectrochemical water splitting, and ultraviolet photoelectric conversion, making GaON a versatile functionality extender.

Applied Physics,Materials Science
Electrical and optical properties of g-GaN/Al 0.5 Ga 0.5 N 2D/3D heterojunction under surface oxidation via first-principles

Jian Tian,Lei Liu,Xingyue Zhangyang,Zhihao Cao,Zhidong Wang,Hongchang Cheng,Xin Guo

DOI: https://doi.org/10.1016/j.apsusc.2024.161284

IF: 6.7

2024-09-25

Applied Surface Science

Abstract:In this paper, the structural stability, charge transfer, band structure, density of states, absorption coefficient and reflectivity of g-GaN/Al 0.5 Ga 0.5 N heterojunction after surface oxidation are investigated. Our results reveal that formation energy of adsorptive oxidation process is negative and the oxidized surface can be formed spontaneously. The substitutional oxidation process is heat-absorbing and structure is unstable, which is not easy to occur. Band structure show that new energy levels are created due to charge transfer between O atom and heterojunction after surface oxidation. The electronic states of O-p orbitals hybridize with those of Ga-s, Ga-p, and Al-p orbitals, while O-s orbitals affect energy levels at low-energy end. Meanwhile, work function of heterojunction increases after oxidation, weakening electron emission properties of material surface. The results of optical properties illustrate that substitutional oxidation is detrimental to light absorption, while adsorption oxidation slightly enhances light absorption, especially when adsorption oxidation occurs in g-GaN layer, which is competitive for improvement of optical properties. This study can be useful for the removal of surface oxides from g-GaN/AlGaN heterojunction.

chemistry, physical,physics, applied, condensed matter,materials science, coatings & films
Tailoring and functionalizing the graphitic-like GaN and GaP nanostructures as selective sensors for NO, NO2, and NH3 adsorbing: a DFT study

Mollaamin, Fatemeh

DOI: https://doi.org/10.1007/s00894-023-05567-8

IF: 2.172

2023-05-07

Journal of Molecular Modeling

Abstract:Langmuir adsorption of gas molecules of NO, NO 2 , and NH 3 on the graphitic GaN and GaP sheets has been accomplished using density functional theory. The changes of charge density have shown a more important charge transfer for GaN compared to GaP which acts both as the electron donor while gas molecules act as the stronger electron acceptors through adsorption on the graphitic-like GaN surface. The adsorption of NO and NO 2 molecules introduced spin polarization in the PL-GaN sheet, indicating that it can be employed as a magnetic gas sensor for NO and NO 2 sensing.

chemistry, multidisciplinary,biochemistry & molecular biology,biophysics,computer science, interdisciplinary applications

Histochemical demonstration of phosphatases in the central nervous system of the rat.

NO2 adsorption on GaN surface and its interaction with the yellow-luminescence-associated surface state

The GaN yellow-luminescence-related surface state and its interaction with air

Adsorption and desorption of hydrogen at nonpolar GaN(1-100) surfaces: Kinetics and impact on surface vibrational and electronic properties

From powder to nanowire: A simple and environmentally friendly strategy for optical and electrical GaN nanowire films

Passivation of Surface States in GaN by NiO Particles

Different Origins of the Yellow Luminescence in As-Grown High-Resistance GaN and Unintentional-Doped GaN Films

General aspects of the vapor growth of semiconductor crystals - a study based on DFT simulations of the NH3/NH2 covered GaN(0001) surface in hydrogen ambient

Formation and Applications in Electronic Devices of Lattice‐Aligned Gallium Oxynitride Nanolayer on Gallium Nitride

Nature and Elimination of Yellow-Band Luminescence and Donor–acceptor Emission of Undoped GaN

Defects in GaN Films Studied by Positron Annihilation Spectroscopy

Pulsed N2 Plasma Surface Treatment for AlGaN/GaN HEMTs Prior to PECVD SiNx Passivation to Reduce Plasma Damage

Adsorption of Gas Molecules on Graphene Nanoribbons and Its Implication for Nanoscale Molecule Sensor

Surface chemistry in Atomic Layer Deposition of Gallium Nitride from Triethylgallium and Ammonia studied by mass spectroscopy

Comparison of the structure and optoelectronic properties of NO-adsorbed two-dimensional GaN with planar and hydrogenated structure

Mechanism of yellow luminescence in GaN at room temperature

Adsorption of CO and NO molecules on pristine, vacancy defected and doped graphene-like GaN monolayer: A first-principles study

Electronic properties of air-exposed GaN$(1\bar{1}00)$ and $(0001)$ surfaces after several device processing compatible cleaning steps

Lattice-aligned gallium oxynitride nanolayer for GaN surface enhancement and function extension

Electrical and optical properties of g-GaN/Al 0.5 Ga 0.5 N 2D/3D heterojunction under surface oxidation via first-principles

Tailoring and functionalizing the graphitic-like GaN and GaP nanostructures as selective sensors for NO, NO2, and NH3 adsorbing: a DFT study