Abstract:We report the successful preparation of polycrystalline gallium nitride (poly-GaN) layers by thermal atomic layer deposition (ALD) at low temperatures (375–425 °C) from trimethylgallium (TMG) and ammonia (NH3) precursors. The growth per cycle (GPC) is found to be strongly dependent on the NH3 pulse duration and the NH3 partial pressure. The pressure dependence makes the ALD atypical. We propose that the ALD involves (i) the reversible formation of the hitherto-unreported TMG:NH3 surface adduct, resulting from NH3 physisorbing on a TMG surface site and (ii) the irreversible conversion of neighboring surface adducts to Ga–NH2–Ga linkages. The pressure dependence arises from the presumed reversible nature of the adduct formation on the surface, equivalent to the known reversible nature of its formation in the gas phase in metal organic chemical vapor deposition reactions. Using in situ spectroscopic ellipsometry (SE), the GPC monitored as a function of several ALD parameters is as high as 0.1 nm/cycle at 60 s NH3 pulse and 1.3 mbar NH3 partial pressure. The changes in the growth pattern (as monitored by SE) caused by changes in the ALD parameters support the proposed growth model. Ex situ characterization reveals that the layer is carbon-free, has a polycystalline wurtzitic structure, and shows a decent conformaility over Si trenches. Tuning the ALD recipe allows us to vary the layer composition from Ga-rich to stoichiometric GaN. The Ga richness is attributed to the simultaneous TMG dissociation at the deposition temperatures. This work is the first full-scale report on low temperature thermal ALD of poly-GaN from industrial precursors, occurring via a novel chemical pathway and not requiring any radical assistance (such as plasma) as used before.

Surface chemistry in Atomic Layer Deposition of Gallium Nitride from Triethylgallium and Ammonia studied by mass spectroscopy

Surface chemistry in atomic layer deposition of AlN thin films from Al(CH3)3 and NH3 studied by mass spectrometry

Thermal Atomic Layer Deposition of Polycrystalline Gallium Nitride

A Mass Spectrometrical Surface Chemistry Study of Aluminum Nitride ALD from Tris-Dimethylamido Aluminum and Ammonia

Growth of GaN Thin Films Using Plasma Enhanced Atomic Layer Deposition: Effect of Ammonia-Containing Plasma Power on Residual Oxygen Capture

Investigation of atomic layer deposition methods of Al2O3 on n -GaN

General aspects of the vapor growth of semiconductor crystals - a study based on DFT simulations of the NH3/NH2 covered GaN(0001) surface in hydrogen ambient

Surface Reaction Mechanism of Atomic Layer Deposition of Titanium Nitride Using Tetrakis(dimethylamino)titanium and Ammonia

Aluminum Oxide at the Monolayer Limit via Oxidant-free Plasma-Assisted Atomic Layer Deposition on GaN

Initial Surface Reactions in Atomic Layer Deposition of Al2O3on the Hydroxylated GaAs(001)-4 × 2 Surface

Gallium nitride deposition via magnetron sputtering: Linking plasma-surface interactions and thin film crystalline features

Growth of AlGaN under the conditions of significant gallium evaporation: phase separation and enhanced lateral growth

Spectroscopic Characterization of the Plasma Generated During the Deposition of AlxGa1−xN Films by Pulsed Laser Co-Ablation of Al and GaAs Targets in Electron Cyclotron Resonance Nitrogen Plasma

Mesoporous Silica Supported Highly Dispersed GaN Catalysts Synthesized by Thermal Atomic Layer Deposition for Propane Dehydrogenation

Surface Reaction Mechanism on GaN MOVPE Growth

Adsorption of Al on Gan(110) Surface

In situ chemical functionalization of gallium nitride with phosphonic acid derivatives during etching

Gas-Phase Chemical Reaction Mechanism in the Growth of AlN during High-Temperature MOCVD: A Thermodynamic Study

Quantum Chemical Study of the Initial Surface Reactions in Atomic Layer Deposition of TiN on the SiO(2) Surface.

Laser-Assisted Metalorganic Chemical Vapor Deposition of GaN

Chemical and electrical characterization of AL2O 3/gaas interface improved by NH3 plasma pretreatment