Abstract:Vapor growth of semiconductors is analyzed using recently obtained dependence of the adsorption energy on the electron charge transfer between the surface adsorbed species and the bulk [Krukowski et al. J. Appl. Phys. 114 (2013) 063507, Kempisty et al. ArXiv <a class="link-https" data-arxiv-id="1307.5778" href="https://arxiv.org/abs/1307.5778">1307.5778</a> (2013)]. Ab initio calculations were performed to study the physical properties of GaN(0001) surface in ammonia-rich conditions, i.e. covered by mixture of NH3 molecules and NH2 radicals. The Fermi level is pinned at valence band maximum (VBM) and conduction band minimum (CBM) for full coverage by NH3 molecules and NH2 radicals, respectively. For the crossover content of ammonia of about 25% monolayer (ML), the Fermi level is unpinned. It was shown that hydrogen adsorption energy depends on the doping in the bulk for the unpinned Fermi level, i.e. for this coverage. Surface structure thermodynamic and mechanical stability criteria are defined and compared. Mechanical stability of the coverage of such surfaces was checked by determination of the desorption energy of hydrogen molecules. Thermodynamic stability analysis indicates that initally equilibrium hydrogen vapor partial pressure steeply increases with NH3 content to attain the crossover NH3/NH2 coverage, i.e. the unpinned Fermi level condition. For such condition the entire range of experimentally accessible pressures belongs showing that vapor growth of semiconductor crystals occurs predominantly for unpinned Fermi level at the surface, i.e. for flat bands. Accordingly, adsorption energy of most species depends on the doping in the bulk that is basis of the possible molecular scenario explaining dependence of the growth and the doping of semiconductor crystals on the doping in the bulk

Surface Reaction Mechanism on GaN MOVPE Growth

Reaction Pathways of Gan (0001) Growth from Trimethylgallium and Ammonia Versus Triethylgalliunn and Hydrazine Using First Principle Calculations

Growth Rate and Surface Morphology as A Function of Growth Parameter for GaN MOCVD

Adsorption Properties of Al, Ga, and N Related Particles on GaN Substrate Surface by First Principle Calculations

General aspects of the vapor growth of semiconductor crystals - a study based on DFT simulations of the NH3/NH2 covered GaN(0001) surface in hydrogen ambient

Stm Study of Controlling Heteroepitaxial Growth of Nitride Semiconductor Films on an Atomic Scale

Ab Initio Study for Molecular-Scale Adsorption, Decomposition and Desorption on AlN Surfaces During MOCVD Growth

The Chemistry of GaN Growth

Analysis of GaN Crystal Growth Mechanism in Liquid-Phase Epitaxial Na-flux Method

Understanding the Growth Mechanism of GaN Epitaxial Layers on Mechanically Exfoliated Graphite.

Atomic Adsorption Mechanism and Initial Growth of 2D GaN on Graphene, H-Bn and MoS2: A First Principles Study

Behavior of Aluminum Adsorption and Incorporation at Gan(0001) Surface: First-Principles Study

Growth behavior of GaN film along non-polar [11–20] directions

Thermodynamic Analysis of Ga-N-C-H System for Movpe Process

The first principle study on the atomic and electronic structure of GaN() surface

Stm Study of Ag Film Initial Stages Growth on A Gan(0001) Surface Grown by Mbe

Effects of the surface stoichiometry of seeds on GaN layer growth by hydride vapour phase epitaxy.

Development of GaN Growth Reaction Model Using Ab Initio Molecular Orbital Calculation and Computational Fluid Dynamics of Metalorganic Vapor-Phase Epitaxy

Gd on GaN(0001) Surface: Growth, Interaction, and Fermi Level Movement

Variations in Mechanisms of Selective Area Growth of Gan on Nano-Patterned Substrates by Movpe

Density functional theory study on parasitic reactions of GaN-MOVPE