Abstract: Good understanding of transport phenomena in vapor deposition systems is critical to fast and effective crystal growth system design. Transport phenomena are complicated and are related to operating conditions, such as temperature, velocity, pressure, and species concentration, and geometrical conditions, such as reactor geometry and source–substrate distance. Due to the limited in situ experimental monitoring, design and optimization of growth is mainly performed through semi-empirical and trial-and-error methods. Such an approach is only able to achieve improvement in the deposition sequence and cannot fulfill the increasingly stringent specifications required in industry. Numerical simulation has become a powerful alternative, as it is fast and easy to obtain critical information for the design and optimization of the growth system. The key challenge in vapor deposition modeling lies in developing an accurate simulation model of gas-phase and surface reactions, since very limited kinetic information is available in the literature. In this chapter, GaN thin-film growth by iodine vapor-phase epitaxy (IVPE) is used as an example to present important steps for system design and optimization by the numerical modeling approach. The advanced deposition model will be presented for multicomponent fluid flow, homogeneous gas-phase reaction inside the reactor, heterogeneous surface reaction on the substrate surface, heat transfer, and species transport. Thermodynamic and kinetic analysis will be presented for gas-phase and surface reactions, together with a proposal for the reaction mechanism based on experiments. The prediction of deposition rates is presented. Finally, the surface evolution of film growth from vapor is analyzed for the case in which surface diffusion determines crystal grain size and morphology. Key control parameters for film instability are identified for quality improvement.

Development of GaN Growth Reaction Model Using Ab Initio Molecular Orbital Calculation and Computational Fluid Dynamics of Metalorganic Vapor-Phase Epitaxy

Beyond ab initio reaction simulator: an application to GaN metalorganic vapor phase epitaxy

Effects of Reaction-Kinetic Parameters on Modeling Reaction Pathways in GaN MOVPE Growth

Modeling of a Gallium Nitride Epitaxy Growth System

Numerical Study Of Transport And Reaction Phenomena In Gan Vapor Phase Epitaxy

Thermodynamic and kinetic study of transport and reaction phenomena in gallium nitride epitaxy growth

The Chemistry of GaN Growth

The Dependence of Growth Rate of GaN Buffer Layer on Growth Parameters by Metalorganic Vapor-Phase Epitaxy

Numerical Simulation of Gas Phase and Surface Reaction for Growth of GaN by MOCVD

Surface Reaction Mechanism on GaN MOVPE Growth

Kinetic Monte Carlo Study Of Metal Organic Chemical Vapor Deposition Growth Dynamics Of Gan Thin Film At Microscopic Level

Growth Rate and Surface Morphology as A Function of Growth Parameter for GaN MOCVD

Epitaxy growth kinetics of GaN films

Vapor Growth of III Nitrides

Laser-Assisted Metalorganic Chemical Vapor Deposition of GaN

Model for Low-Temperature Growth of Gallium Nitride

Quantum Chemistry Calculation of GaN Growth Mechanism by MOCVD

Modeling of Gas Phase and Surface Reactions in an Aluminum Nitride Growth System

Growth of AlGaN under the conditions of significant gallium evaporation: phase separation and enhanced lateral growth

Epitaxial growth of high-quality GaN with a high growth rate at low temperatures by radical-enhanced metalorganic chemical vapor deposition

Quantum chemical study of trimethylindium and trimethylgallium gas-phase reaction pathways in InGaN MOCVD growth