Abstract:The process of graphene growth by CVD involves a series of complex gas-phase surface chemical reactions, which generally go through three processes, including gas phase decomposition, surface chemical reaction, and gas phase diffusion. The complexity of the CVD process for growing graphene is that it involves not only chemical reactions but also mass, momentum, and energy transfer. To solve these problems, the method of numerical simulation combined with the reactor structure optimization model provides a good tool for industrial production and theoretical research to explore the influencing factors of the CVD growth of graphene. The objective of this study was to establish a simplified reaction model for the growth of graphene by chemical vapor deposition(CVD) in a vertical rotating disk reactor (VRD). From a macroscopic modeling perspective, computational fluid dynamics (CFD) was used to investigate the conditions for the growth of graphene by chemical vapor deposition in a high-speed rotating vertical disk reactor on a copper substrate surface at atmospheric pressure (101,325 Pa). The effects of gas temperature, air inlet velocity, base rotation speed, and material ratio on the surface deposition rate of graphene in a VRD reactor were studied, and the technological conditions for the preparation of graphene via the CVD method in a VRD reactor based on a special structure were explored. Compared with existing models, the numerical results showed the following: the ideal growth conditions of graphene prepared using a CVD method in a VRD reactor involve a growth temperature of 1310 K, an intake speed of 470 mL/min, a base speed of 300 rpm, and an H2 flow rate of 75 sccm; thus, more uniform graphene with a better surface density and higher quality can be obtained. The effect of the carbon surface deposition rate on the growth behavior of graphene was studied using molecular dynamics (MD) from a microscopic perspective. The simulation showed that the graphene surface deposition rate could control the nucleation density of graphene. The combination of macro- and microsimulation methods was used to provide a theoretical reference for the production of graphene.

Numerical Simulation of Gas Phase and Surface Reaction for Growth of GaN by MOCVD

CFD NUMERICAL SIMULATION AND OPTIMIZATION OF GAN-MOCVD REACTOR

CFD Simulation of Flow Patterns in GaN-MOCVD Reactor

Growth Rate and Surface Morphology as A Function of Growth Parameter for GaN MOCVD

Numerical Study And Optimization Of Gan Thin-Film Growth By Mocvd Method

Numerical Simulation Study on Chemical Reaction-transport Process of AlN MOCVD Growth

Study on the optimization of the deposition rate of planetary GaN-MOCVD films based on CFD simulation and the corresponding surface model

Kinetic Monte Carlo Study Of Metal Organic Chemical Vapor Deposition Growth Dynamics Of Gan Thin Film At Microscopic Level

Simulation-Assisted Design of Metal Organic Chemical Vapor Deposition Reactor

Numerical-simulation-based Design and Verification of MOCVD Reactor

Simulation of the ZnO-MOCVD Horizontal Reactor Geometry

Numerical simulation study on growth rate and gas reaction path of InN-MOCVD with Close-Coupled showerhead reactor

Roles of V/III ratio and mixture degree in GaN growth: CFD and MD simulation study

Simulation of a New Style Vertical HVPE System

Numerical Study Of Transport And Reaction Phenomena In Gan Vapor Phase Epitaxy

Simulation of growing GaN in vertical HVPE reactor

Numerical Simulation of a Simplified Reaction Model for the Growth of Graphene via Chemical Vapor Deposition in Vertical Rotating Disk Reactor

Simulation of the Mocvd Reactor for Zno Growth

Quantum Chemistry Calculation of GaN Growth Mechanism by MOCVD

Numerical investigation on the effect of gas-phase dynamics on graphene growth in chemical vapor deposition

Growth rate control and phase diagram of wafer-scale Ga2O3 films by MOCVD