Abstract: Good understanding of transport phenomena in vapor deposition systems is critical to fast and effective crystal growth system design. Transport phenomena are complicated and are related to operating conditions, such as temperature, velocity, pressure, and species concentration, and geometrical conditions, such as reactor geometry and source–substrate distance. Due to the limited in situ experimental monitoring, design and optimization of growth is mainly performed through semi-empirical and trial-and-error methods. Such an approach is only able to achieve improvement in the deposition sequence and cannot fulfill the increasingly stringent specifications required in industry. Numerical simulation has become a powerful alternative, as it is fast and easy to obtain critical information for the design and optimization of the growth system. The key challenge in vapor deposition modeling lies in developing an accurate simulation model of gas-phase and surface reactions, since very limited kinetic information is available in the literature. In this chapter, GaN thin-film growth by iodine vapor-phase epitaxy (IVPE) is used as an example to present important steps for system design and optimization by the numerical modeling approach. The advanced deposition model will be presented for multicomponent fluid flow, homogeneous gas-phase reaction inside the reactor, heterogeneous surface reaction on the substrate surface, heat transfer, and species transport. Thermodynamic and kinetic analysis will be presented for gas-phase and surface reactions, together with a proposal for the reaction mechanism based on experiments. The prediction of deposition rates is presented. Finally, the surface evolution of film growth from vapor is analyzed for the case in which surface diffusion determines crystal grain size and morphology. Key control parameters for film instability are identified for quality improvement.

Kinetic Monte Carlo Study Of Metal Organic Chemical Vapor Deposition Growth Dynamics Of Gan Thin Film At Microscopic Level

Growth Rate and Surface Morphology as A Function of Growth Parameter for GaN MOCVD

P‐7.3: Numerical Modeling of GaN Growth by MOCVD on Metal Substrate

Numerical Simulation of Gas Phase and Surface Reaction for Growth of GaN by MOCVD

Numerical Study And Optimization Of Gan Thin-Film Growth By Mocvd Method

The Chemistry of GaN Growth

Operational Optimization of GaN Thin Film Growth Employing Numerical Simulation in a Showerhead MOCVD Reactor

Simulation-Assisted Design of Metal Organic Chemical Vapor Deposition Reactor

CFD NUMERICAL SIMULATION AND OPTIMIZATION OF GAN-MOCVD REACTOR

Study on the optimization of the deposition rate of planetary GaN-MOCVD films based on CFD simulation and the corresponding surface model

Vapor Growth of III Nitrides

Numerical simulation study on growth rate and gas reaction path of InN-MOCVD with Close-Coupled showerhead reactor

Modeling the Deposition of Thin Films of Transition Metal Nitrides

Roles of V/III ratio and mixture degree in GaN growth: CFD and MD simulation study

In-Situ Monitoring Technology for Growth of III Nitrides by Metal Organic Chemical Vapor Deposition

A CFD Study of the Gas Reaction Path in Growth of InN Films in Metal–organic Chemical Vapor Deposition

MOCVD Process Numerical Simulation of GaN and Geometrical Optimization of the Showerhead Reactor

Theoretical Study on Thin-Film Formation by Parallel Molecular Dynamics Simulation

Thermodynamic and kinetic study of transport and reaction phenomena in gallium nitride epitaxy growth

CFD Simulation of Flow Patterns in GaN-MOCVD Reactor

Numerical Study Of Transport And Reaction Phenomena In Gan Vapor Phase Epitaxy