Abstract: Good understanding of transport phenomena in vapor deposition systems is critical to fast and effective crystal growth system design. Transport phenomena are complicated and are related to operating conditions, such as temperature, velocity, pressure, and species concentration, and geometrical conditions, such as reactor geometry and source–substrate distance. Due to the limited in situ experimental monitoring, design and optimization of growth is mainly performed through semi-empirical and trial-and-error methods. Such an approach is only able to achieve improvement in the deposition sequence and cannot fulfill the increasingly stringent specifications required in industry. Numerical simulation has become a powerful alternative, as it is fast and easy to obtain critical information for the design and optimization of the growth system. The key challenge in vapor deposition modeling lies in developing an accurate simulation model of gas-phase and surface reactions, since very limited kinetic information is available in the literature. In this chapter, GaN thin-film growth by iodine vapor-phase epitaxy (IVPE) is used as an example to present important steps for system design and optimization by the numerical modeling approach. The advanced deposition model will be presented for multicomponent fluid flow, homogeneous gas-phase reaction inside the reactor, heterogeneous surface reaction on the substrate surface, heat transfer, and species transport. Thermodynamic and kinetic analysis will be presented for gas-phase and surface reactions, together with a proposal for the reaction mechanism based on experiments. The prediction of deposition rates is presented. Finally, the surface evolution of film growth from vapor is analyzed for the case in which surface diffusion determines crystal grain size and morphology. Key control parameters for film instability are identified for quality improvement.

Roles of V/III ratio and mixture degree in GaN growth: CFD and MD simulation study

Growth Rate and Surface Morphology as A Function of Growth Parameter for GaN MOCVD

Effects of V/III ratio on species diffusion anisotropy in the MOCVD growth of non-polar α-plane GaN films

Numerical Simulation of Gas Phase and Surface Reaction for Growth of GaN by MOCVD

Effects of V/III Ratio on the Growth of a -Plane GaN Films

Effect of growth temperature and V/III-ratio on the surface morphology of MOVPE-grown cubic zincblende GaN

Role of nitrogen source flow on the growth of 2D GaN crystals

Effects of Ⅴ/Ⅲ ratio on species diffusion anisotropy inthe MOCVD growth of non-polar a-plane GaN films

Kinetic Monte Carlo Study Of Metal Organic Chemical Vapor Deposition Growth Dynamics Of Gan Thin Film At Microscopic Level

The effect of V/III ratio on the morphology and structure of GaAs nanowires by MOCVD

Vapor Growth of III Nitrides

Study on the optimization of the deposition rate of planetary GaN-MOCVD films based on CFD simulation and the corresponding surface model

Surface Morphology and Composition Studies in InGaN/GaN Film Grown by MOCVD

Numerical Study And Optimization Of Gan Thin-Film Growth By Mocvd Method

Molecular dynamics studies of defect formation during heteroepitaxial growth of InGaN alloys on (0001) GaN surfaces

Effect of AlN/GaN supercycle ratio on properties of Al x Ga 1−x N films using super-cycle plasma enhanced atomic layer deposition

Numerical simulation study on growth rate and gas reaction path of InN-MOCVD with Close-Coupled showerhead reactor

Significantly improved surface morphology of N-polar GaN film grown on SiC substrate by the optimization of V/III ratio

Quantum Chemistry Calculation of GaN Growth Mechanism by MOCVD

The Influence of V/III Ratio on GaN Grown on Patterned Sapphire Substrate with Low Temperature AlN Buffer Layer by Hydride Vapor Phase Epitaxy

Model for Low-Temperature Growth of Gallium Nitride