Abstract:The surface orientation can have profound effects on the atomic-scale processes of crystal growth, and is essential to such technologies as GaN-based light-emitting diodes and high-power electronics. We investigate the dependence of homoepitaxial growth mechanisms on the surface orientation of a hexagonal crystal using kinetic Monte Carlo simulations. To model GaN metal-organic vapor phase epitaxy, in which N species are supplied in excess, only Ga atoms on a hexagonal close-packed (HCP) lattice are considered. The results are thus potentially applicable to any HCP material. Growth behaviors on c-plane ${(0 0 0 1)}$ and m-plane ${(0 1 \overline{1} 0)}$ surfaces are compared. We present a reciprocal space analysis of the surface morphology, which allows extraction of growth mode boundaries and direct comparison with surface X-ray diffraction experiments. For each orientation we map the boundaries between 3-dimensional, layer-by-layer, and step flow growth modes as a function of temperature and growth rate. Two models for surface diffusion are used, which produce different effective Ehrlich-Schwoebel step-edge barriers, and different adatom diffusion anisotropies on m-plane surfaces. Simulation results in agreement with observed GaN island morphologies and growth mode boundaries are obtained. These indicate that anisotropy of step edge energy, rather than adatom diffusion, is responsible for the elongated islands observed on m-plane surfaces. Island nucleation spacing obeys a power-law dependence on growth rate, with exponents of -0.24 and -0.29 for m- and c-plane, respectively.

Quantum Chemistry Calculation of GaN Growth Mechanism by MOCVD

The Chemistry of GaN Growth

Numerical Simulation of Gas Phase and Surface Reaction for Growth of GaN by MOCVD

Growth Rate and Surface Morphology as A Function of Growth Parameter for GaN MOCVD

Surface Reaction Mechanism on GaN MOVPE Growth

Roles of V/III ratio and mixture degree in GaN growth: CFD and MD simulation study

Growth and Characterization of M Plane GaN Material by MOCVD

Kinetic Monte Carlo Study Of Metal Organic Chemical Vapor Deposition Growth Dynamics Of Gan Thin Film At Microscopic Level

Development of GaN Growth Reaction Model Using Ab Initio Molecular Orbital Calculation and Computational Fluid Dynamics of Metalorganic Vapor-Phase Epitaxy

Monte Carlo Simulation of Quantum Dots 2D-3D Growth by MBE

Structural Modulation of GaN Nanowires Grown in High-Density Plasma Environment

Point defect reduction in MOCVD (Al)GaN by chemical potential control and a comprehensive model of C incorporation in GaN

Numerical Study And Optimization Of Gan Thin-Film Growth By Mocvd Method

Surface Morphology and Composition Studies in InGaN/GaN Film Grown by MOCVD

Numerical Simulation Study on Chemical Reaction-transport Process of AlN MOCVD Growth

Study on the optimization of the deposition rate of planetary GaN-MOCVD films based on CFD simulation and the corresponding surface model

Kinetic Monte Carlo simulations of GaN homoepitaxy on c- and m-plane surfaces

Model for Low-Temperature Growth of Gallium Nitride

The Fabrication of GaN Quantum Dots Using Metalorganic Chemical Vapor Deposition

Investigation into the MOCVD Growth and Optical Properties of InGaN/GaN Quantum Wells by Modulating NH3 Flux

Selection of Gallium Growth by MOCVD