Abstract:Gallium nitride (GaN) is a wide bandgap semiconductor with many important applications in optoelectronics, photonics, and both high power and high temperature operation devices. Understanding the surface deposition mechanisms and energetics for different precursors is essential to improving thin-film crystalline quality and growth process requirements for extended engineering applications. Here, we use ab initio calculations to study the reaction mechanisms of GaN thin film growth on (0001) surface from ammonia (NH3) and hydrazine (N2H4), nitrogen precursors, and trimethylgallium (TMG) and triethylgallium (TEG), gallium precursors. We find that the initial dehydrogenation of N2H4 is more facile than that of NH3, at 1.15 versus 13.61 kcal/mol, respectively, and that neighboring adsorbed surface hydrogens reduce the barriers for further decomposition of NH2 and NH. We also find that the growth of nitrogen layers is a reaction-limited process rather than diffusion-limited at low adsorbate coverage. On the other hand, the deposition of Ga on a nitrogen rich surface via TMG is limited by the abstraction reaction of the second methyl (CH3) group in TMG, with a barrier of 42.54 kcal/mol. The mechanisms of adsorption of TMG and TEG are different, whereas TMG dissociatively chemisorbs releasing one methane group, the beta-hydrate elimination (C2H4 + H) in TEG is favored through surface interactions (without chemisorption) at a comparable energy barrier to the first CH3 dissociation in TMG. This does not suggest a more favorable thermodynamic route to low-temperature growth, but it does favor TEG for avoiding the explicit abstraction or insertion of C groups during metalorganic chemical vapor deposition (MOCVD) or atomic layer deposition (ALD) techniques.

The Chemistry of GaN Growth

Thermodynamic and kinetic study of transport and reaction phenomena in gallium nitride epitaxy growth

Systematic Study of Epitaxy Growth Uniformity in a Specific MOCVD Reactor

Gan heteroepitaxial growth techniques

Analysis of GaN Crystal Growth Mechanism in Liquid-Phase Epitaxial Na-flux Method

Kinetic Monte Carlo Study Of Metal Organic Chemical Vapor Deposition Growth Dynamics Of Gan Thin Film At Microscopic Level

Hot-Wall MOCVD for High-Quality Homoepitaxy of GaN: Understanding Nucleation and Design of Growth Strategies

Progress in bulk GaN growth

Understanding the Growth Mechanism of GaN Epitaxial Layers on Mechanically Exfoliated Graphite.

Research Progress in Liquid Phase Growth of GaN Crystals

Growth And Doping Of Bulk Gan By Hydride Vapor Phase Epitaxy

Process and Equipment of Gallium Nitride Single Crystal Growth with Ammonothermal Method

Plasma Assisted Molecular Beam Epitaxial Growth of GaN with Low Growth Rates and Their Properties

Epitaxy growth kinetics of GaN films

Growth Mechanisms of GaN/GaAs Nanostructures by Droplet Epitaxy Explained by Complementary Experiments and Simulations

Reaction Pathways of Gan (0001) Growth from Trimethylgallium and Ammonia Versus Triethylgalliunn and Hydrazine Using First Principle Calculations

Numerical Study Of Transport And Reaction Phenomena In Gan Vapor Phase Epitaxy

Growth of GaN Quasi‐substrates by Hydride Vapor Phase Epitaxy

P‐7.3: Numerical Modeling of GaN Growth by MOCVD on Metal Substrate

Evaluation of GaN Growth Improvement Techniques