Abstract:Due to the large thermal and lattice mismatch between gallium oxide (Ga2O3) and diamond, the resulting residual stress brings high defect densities and susceptibility to cracking on the Ga2O3 epilayer. To balance the stress-strain behavior and eliminate the dislocation defects, this study employed diamond composite substrates which consist of a pre-grown AlN strain interlayer on the surface of the bulk diamond to heteroepitaxy Ga2O3 nanomembranes via pulsed laser deposition (PLD). To achieve an optimal solution of high-quality Ga2O3 thin films, several comparative investigations were proposed and gave a preliminary exploration. Subsequently, spectroscopic ellipsometry (SE), high-resolution X-ray diffraction (HRXRD), atomic force microscopy (AFM), and X-ray photoelectron spectroscopy (XPS), were performed to characterize the physical, chemical, and optical properties. A comprehensive analysis was conducted on the quality of Ga2O3 thin films dependent on the growth processes including oxygen pressure, in-situ annealing treatment, and the “two-step” growth. It demonstrated that high oxygen pressure significantly increased the growth rate of Ga2O3 (∼ 2 times), slightly improved crystallinity and surface morphology (RMS decreased ∼ 2.2 nm), and reduced oxygen vacancy defects (∼ 3%). The additional in-situ annealing process and the “two-step” growth method also brought a bit of thickness increase (∼ 28 nm and ∼ 14 nm, respectively). By in-situ annealing in various stages, 2D and 3D growth modes competition caused Ga2O3 thin films' continuous grain growth and fewer oxygen vacancy defects but presented different variations of surface morphology. On the whole, the “two-step” growth enhancement scheme proves the largest effect on Ga2O3's quality among the designed sets of experiments. Exploring various optimization schemes and proposing a highly reliable growth technology route is of great significance to give impetus to Ga2O3 application in the electric power field. Consequently, for further insight, continuous work will be propelled in the future.

Evaluation of GaN Growth Improvement Techniques

Gan heteroepitaxial growth techniques

The Effect of Gan Single Crystal Substrate Characteristics on Homo-Epitaxial Gan Films

X-ray Characterization of GaN Single Crystal Layers Grown by the Ammonothermal Technique on HVPE GaN Seeds and by the Sublimation Technique on Sapphire Seeds

Laser applications in GaN growth and processing

Optimization of the Parameters for Growth High-Qulity Gan Film by Hydride Vapor Phase Epitaxy

Improving Optical and Electrical Characteristics of GaN Films via 3D Island to 2D Growth Mode Transition Using Molecular Beam Epitaxy

The Chemistry of GaN Growth

Enhancing two-dimensional growth of high-temperature AlN buffer to improve the quality of GaN on Si grown by ex situ two-step method

Epitaxial Growth And Structural Analysis Of Aln/Gan Heterostructures

Homo-epitaxial Growth of High Crystal Quality GaN Thin Films by Plasma Assisted–molecular Beam Epitaxy

The Growth of High-Quality and Self-Separation GaN Thick-Films by Hydride Vapor Phase Epitaxy

GaN Substrate and GaN Homo-Epitaxy for LEDs： Progress and Challenges

Structural Characterization of Epitaxial Lateral Overgrowth GaN by MOCVD

A Study of Gan Regrowth on the Micro-Faceted Gan Template Formed by in Situ Hcl Etching

High-quality GaN grown on nitrogen-doped monolayer graphene without an intermediate layer

Plasma Assisted Molecular Beam Epitaxial Growth of GaN with Low Growth Rates and Their Properties

Optimization of Heteroepitaxial Gallium Oxide Thin Films on Diamond Composite Substrates using Pulsed Laser Deposition Method

Grouped and Multistep Nanoheteroepitaxy: Toward High-Quality GaN on Quasi-Periodic Nano-Mask.

Gan Grown on Ain/Sapphire Templates

Geometrically-Controlled Microscale Patterning and Epitaxial Lateral Overgrowth of Nitrogen-Polar GaN