Abstract:An atmospheric pressure mist chemical vapor deposition (mist-CVD) system has been developed to prepare zinc oxide (ZnO)-based thin films. This is a promising method for large-area deposition at low temperatures taking into account of its simplicity, inexpensiveness, and safety. Nominally pure ZnO, Al-doped n-type ZnO (ZnO:Al), and N-doped p-type ZnO (ZnO:N) thin films, as well as Zn1−xCdxO and Zn1−yMgyO alloy films, have been deposited by this mist-CVD system. The films deposited at the temperatures ranging from 400 to 500°C were of an acceptable crystallinity with (002) preferential orientation and homogeneous surface. All the films exhibited high transmittance of about 90% in visible regions and dominant UV emission in the photoluminescence spectra. The n-type ZnO:Al films had a low resistivity of 1.08×10–3Ωcm at an optimal Al content of 4at%. The p-type conductivity was obtained in ZnO:N films annealed at higher temperatures with a resistivity of 72.8Ωcm, Hall mobility of 2.28cm2V−1s−1, and hole concentration of 3.76×1016cm−3, as confirmed by Hall-effect measurements. A hydrogen-assisted nitrogen-doping mechanism was proposed to answer for the realization of p-type conductivity in ZnO. The films of Zn1−xCdxO and Zn1−yMgyO ternary alloys were also deposited by this technique. The band gap energies, for instance, were 3.05eV for Zn1−xCdxO (x=0.06), 3.28eV for ZnO, and 3.56eV for Zn1−yMgyO (y=0.11), as confirmed by the optical absorption spectra. The band gap engineering could be readily realized in the ZnO system using mist-CVD.

Simulation of the Mocvd Reactor for Zno Growth

Modeling Analysis of the Mocvd Growth of Zno Film

Simulation of the ZnO-MOCVD Horizontal Reactor Geometry

Numerical and Experimental Comparative Study of Metal-Organic Chemical Vapor Deposition of ZnO

Mist CVD Growth of ZnO-Based Thin Films and Nanostructures

Simulation and Suppression of the Gas Phase Pre-Reaction in Metal-Organic Chemical Vapor Deposition of Zno

Simulation and experimental verification study on the process parameters of ZnO-MOCVD

Competitive Adsorption and Two-Site Occupation Effects in Metal-Organic Chemical Vapor Deposition of Zno

Simulation-Assisted Design of Metal Organic Chemical Vapor Deposition Reactor

Zno-based Thin Films Synthesized by Atmospheric Pressure Mist Chemical Vapor Deposition

Microstructure Characters of Cu/ZnO Catalyst Precipitated Inside Microchannel Reactor

Numerical Simulation of Gas Phase and Surface Reaction for Growth of GaN by MOCVD

Mocvd Growth and Properties of Zno Films Using Dimethylzinc and Oxygen

Numerical simulation of atomic layer deposition for thin deposit formation in a mesoporous substrate

CFD NUMERICAL SIMULATION AND OPTIMIZATION OF GAN-MOCVD REACTOR

Growth Parameters and Substrate Treatment for the MOCVD Growth of ZnO

Mocvd Growth and Properties of Zno Thin Films on Linbo3 Substrates

Phase Diagram of Interfacial Growth Modes by Vapor Deposition and Its Application for ZnO Nanostructures

Numerical simulation study on growth rate and gas reaction path of InN-MOCVD with Close-Coupled showerhead reactor

MOCVD growth and properties of ZnO and Zn1-xMgxO films

Oxidants in ZnO Thin Film Growth by LP-MOCVD