Abstract:An atmospheric pressure mist chemical vapor deposition (mist-CVD) system has been developed to prepare zinc oxide (ZnO)-based thin films. This is a promising method for large-area deposition at low temperatures taking into account of its simplicity, inexpensiveness, and safety. Nominally pure ZnO, Al-doped n-type ZnO (ZnO:Al), and N-doped p-type ZnO (ZnO:N) thin films, as well as Zn1−xCdxO and Zn1−yMgyO alloy films, have been deposited by this mist-CVD system. The films deposited at the temperatures ranging from 400 to 500°C were of an acceptable crystallinity with (002) preferential orientation and homogeneous surface. All the films exhibited high transmittance of about 90% in visible regions and dominant UV emission in the photoluminescence spectra. The n-type ZnO:Al films had a low resistivity of 1.08×10–3Ωcm at an optimal Al content of 4at%. The p-type conductivity was obtained in ZnO:N films annealed at higher temperatures with a resistivity of 72.8Ωcm, Hall mobility of 2.28cm2V−1s−1, and hole concentration of 3.76×1016cm−3, as confirmed by Hall-effect measurements. A hydrogen-assisted nitrogen-doping mechanism was proposed to answer for the realization of p-type conductivity in ZnO. The films of Zn1−xCdxO and Zn1−yMgyO ternary alloys were also deposited by this technique. The band gap energies, for instance, were 3.05eV for Zn1−xCdxO (x=0.06), 3.28eV for ZnO, and 3.56eV for Zn1−yMgyO (y=0.11), as confirmed by the optical absorption spectra. The band gap engineering could be readily realized in the ZnO system using mist-CVD.

Simulation and Suppression of the Gas Phase Pre-Reaction in Metal-Organic Chemical Vapor Deposition of Zno

Formation and Rate Processes of Y[sub 2]o[sub 3] Stabilized ZrO[sub 2] Thin Films from Zr(DPM)[sub 4] and Y(DPM)[sub 3] by Cold-Wall Aerosol-Assisted MOCVD

Simulation of the Mocvd Reactor for Zno Growth

Microstructure Characters of Cu/ZnO Catalyst Precipitated Inside Microchannel Reactor

Numerical and Experimental Comparative Study of Metal-Organic Chemical Vapor Deposition of ZnO

Mist CVD Growth of ZnO-Based Thin Films and Nanostructures

Zno-based Thin Films Synthesized by Atmospheric Pressure Mist Chemical Vapor Deposition

Effects of reaction progress in microchannel on microstructure of Cu-Zn catalyst

Effect of Reaction Temperature on Surface Morphology and Photoelectric Properties of ZnO Grown by Hydrothermal Method in Mixed Solvent

Competitive Adsorption and Two-Site Occupation Effects in Metal-Organic Chemical Vapor Deposition of Zno

Formation and Rate Processes of Y2o3 Stabilized Zro2 Thin Films from Zr(Dpm)(4) and Y(Dpm)(3) by Cold-Wall Aerosol-Assisted Mocvd

Modeling Analysis of the Mocvd Growth of Zno Film

Simulation and experimental verification study on the process parameters of ZnO-MOCVD

Preparation of nano-ZnO in membrane dispersion micro-reactor and modeling

Comparative Study of the Effect of H2 Addition on ZnO Films Grown by Different Zinc and Oxygen Precursors

Preparation and Photoluminescence of ZnO with Nanostructure by Hollow-Cathode Discharge

ReaxFF Molecular Dynamic Simulations of ZnO Nanocluster and Films in H-2 Atmosphere

Phase Diagram of Interfacial Growth Modes by Vapor Deposition and Its Application for ZnO Nanostructures

Simulation of the ZnO-MOCVD Horizontal Reactor Geometry

Optimization study of metal-organic chemical vapor deposition of ZnO on sapphire substrate

Numerical simulation of atomic layer deposition for thin deposit formation in a mesoporous substrate