Simulation and experimental verification study on the process parameters of ZnO-MOCVD

Jie Wang,Yi-cong He,Tie-Cheng Luo,Ya Li,Zheng Zhou,Bing-feng Fan,Jian Li,Gang Wang
DOI: https://doi.org/10.1016/j.ceramint.2021.02.113
IF: 5.532
2021-06-01
Ceramics International
Abstract:<p>Metal-organic chemical vapor deposition (MOCVD) is a key technique for developing and manufacturing zinc oxide (ZnO) devices. The film quality and performance of these devices are influenced by the process parameters. In this study, the film deposition rate and film uniformity obtained from the simulations and experiments under different process parameters, such as the substrate temperature, operating pressure, mass fraction of the source gas, and inlet flow rate, are compared and verified. In addition, the corresponding temperature field, flow field, distribution of source mass fraction, and velocity field are analyzed using the computational fluid dynamics (CFD) method to explain the influence of the flow field change on deposition rate and film uniformity. This study also presents the correlation test for the film uniformity between the simulation and experimental results; it was found that all the 16 sets of results are significantly correlated and that more than half of them are highly correlated. To ensure the consistency of the experimental results and to prove their reliability, the repeatability test and stability test are conducted.</p>
materials science, ceramics
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