Abstract:The strong correlations between the O/Zn ratio and carbon impurity incorporation have been observed on the ZnO films grown using N2O or O2 as oxygen source in metal-organic chemical vapor deposition (MOCVD). From in-situ mass spectrometric measurements, the O/Zn ratio in the MOCVD reactor is found to decrease to a minimum value as the growth temperature increased till a critical growth temperature Tc, and then increased above Tc due to different dissociation rates of the oxygen and Zn sources. The strongest D and G modes, which are ascribed to carbon clusters sp2 related modes, have been observed in Raman scattering spectroscopy for the ZnO samples grown at Tc, indicating the highest incorporation rate of carbon impurity in the samples grown at Tc. Compared with O2, N2O has a low dissociation rate and that leads to a lower value of O/Zn ratio, resulting in much stronger D and G modes and higher incorporation rate of carbon impurities in the samples grown at Tc. It is interesting to note that the lowest specific resistances from Hall effect measurements were also obtained on the samples grown at Tc, indicating possible electrical contributions from the formation of carbon clusters, which should be highly conductive regions in ZnO. Furthermore, ionization or addition of H2 in the case of N2O can significantly enhance the dissociation of N2O, with film quality improved significantly. This study shows that a high O/Zn ratio is critical to suppress carbon impurity incorporation and to grow high quality ZnO by MOCVD, especially at low growth temperature.

Effect of O_2 Flow Rate on the Properties and Growth of ZnO Thin Films

Influence of O_2/Ar Flow Ratio on Microstructures and Photoluminescence of ZnO Films

The Effects of Oxygen Partial Pressure and Substrate Temperature on the Structural and Optical Properties of Zno Films

Effects of Oxygen Source Ionization on the Growth and Properties of MOCVD ZnO Material

Microstructure and Optical Properties of ZnO Films Deposited by Radio-frequency Reactive Magnetron Sputtering

Effect of solution concentration on surface morphology, optical properties and solar light response of ZnO thin films

Effect of Solution Concentrations on Crystal Structure, Surface Topographies and Photoluminescence Properties of ZnO Thin Films

Effect of Reaction Temperature on Surface Morphology and Photoelectric Properties of ZnO Grown by Hydrothermal Method in Mixed Solvent

Oxidants in ZnO Thin Film Growth by LP-MOCVD

Comparative Study of the Effect of H2 Addition on ZnO Films Grown by Different Zinc and Oxygen Precursors

STRUCTURAL AND OPTICAL STUDIES OF ZnO FILMS GROWN AT LOW TEMPERATURE

Influence of O2 Flow Rate on the Properties of Ga2O3 Growth by RF Magnetron Sputtering

Modeling Analysis of the Mocvd Growth of Zno Film

The Influences of O/Zn Ratio and Growth Temperature on Carbon Impurity Incorporation in Zno Grown by Metal-Organic Chemical Vapor Deposition

Mocvd Growth and Properties of Zno Films Using Dimethylzinc and Oxygen

Effects of Hydrogen Flux on Aluminum Doped Zinc Thin Films by Pulsed Magnetron Sputtering

Effect of Carrier Gas Flow Rate on In2O3 Nanostructure Morphology and Growth Mechanism

Effects of Growth Parameters on Proprties of P-Type ZnO Films Grown by MOCVD

Effect of Sputtering Ambient on The Properties of N Doped ZnO Thin Films

Reactive sputtered ZnO thin films: Influence of the O2/Ar flow ratio on the oxygen vacancies and paramagnetic active sites

Influence of oxygen flow during sputtering process on the electrical properties of Ga-doped InZnSnO thin film transistor