Abstract:A gas inlet channel is established to model the inflow of the inert gas (95% Ar) and dopant gas (5% N2), and a gas outlet channel to model the outflow of the gas species. The joint that allows exchanges of the gas species is modeled as a thin porous graphite sheet to simulate the mass transfer between the inside and outside of the growth chamber. The fluid flow velocity field inside and outside the crucible is calculated inside and outside the crucible under several experimental conditions. Although the exchange of the atmosphere control gas occurs only at the joint, the N2 can still rapidly diffuse to the crystal surface. Single‐crystal silicon carbide (SiC) is an important semiconductor material for the fabrication of power and radio frequency (RF) devices. The major technique for growing single‐crystal SiC is the so‐called physical vapor transport (PVT) method, in which not only the thermal field but also the fluid‐flow field and the distribution of gas species can be hardly measured directly. In this study, a multi‐component flow model is proposed that includes the inside and outside of a growth chamber and a joint between the seed crystal holder and crucible which allows exchanges of the gas species. The joint is simulated as a thin porous graphite sheet. The Hertz‐Knudsen equation is used to describe the sublimation and deposition. The convection and diffusion are described by the Navier–Stokes equations and mixture‐averaged diffusion model, in which the Stefan flow is taken into account. The numerical simulations are conducted by the finite element method (FEM) with a multi‐physics coupled model, which is able to predict the fluid flow field, species distribution field, crystal growth rate, and evolution of the molar concentration of dopant gas. Using this model, the effects of several experimental conditions on the transport of gas species and the growth rate of single‐crystal SiC are analyzed.

Effect of Carrier Gas Flow Rate on In2O3 Nanostructure Morphology and Growth Mechanism

Influence of O_2/Ar Flow Ratio on Microstructures and Photoluminescence of ZnO Films

Growth of in As Nanowires with the Morphology and Crystal Structure Controlled by Carrier Gas Flow Rate

Numerical simulation study on growth rate and gas reaction path of InN-MOCVD with Close-Coupled showerhead reactor

Influence of Carrier Gas on Microstructures and Morphologies of Cu(In_(1-x)Ga_x)Se_2 Films

Effects of Gas Parameters on Properties of In2O3 Thin Films Deposited by Magnetron Sputtering

Role of the carrier gas flow rate in monolayer MoS 2 growth by modified chemical vapor deposition

Influences of Flux of Carrier Gas on Microstructure and Morphologies of Cigs Films

Simulation and Experimental Research Based on Carrier Gas Flow Rate on the Influence of Four-Channel Coaxial Nozzle Flow Field

Annealing effects of In2O3 thin films on electrical properties and application in thin film transistors

Chemical Vapor Deposition Growth of Inn Nanostructures: Morphology Regulation and Field Emission Properties

Influence of O2 Flow Rate on the Properties of Ga2O3 Growth by RF Magnetron Sputtering

The effect of V/III ratio on the morphology and structure of GaAs nanowires by MOCVD

Influence of Carrier Gases on the Quality of Epitaxial Corundum-Structured α-Ga2O3 Films Grown by Mist Chemical Vapor Deposition Method

Experimental and Computational Research on the Effect of Flow Distribution on the Growth of Boron Nitride Nanotubes by Chemical Vapor Deposition

Influence of the Carrier Gas on the Luminescence of ZnO Tetrapod Nanowires

Effect of O_2 Flow Rate on the Properties and Growth of ZnO Thin Films

Anion-induced morphological regulation of In(OH) 3 nanostructures and their conversion into porous In 2O 3 derivatives

Formation Of Nearly Monodisperse In2o3 Nanodots And Oriented-Attached Nanoflowers: Hydrolysis And Alcoholysis Vs Pyrolysis

Numerical Simulation of the Transport of Gas Species in the PVT Growth of Single‐Crystal SiC

Controlled Synthesis of In2O3 Octahedrons and Nanowires