Abstract:In-plane InAs nanowires and nanowire networks show great potential to be used as building blocks for electronic, optoelectronic and topological quantum devices, and all these applications are keen to grow the InAs materials directly on Si substrates since it may enable nanowire electronic and quantum devices with seamless integration with Si platform. However, almost all the in-plane InAs nanowires and nanowire networks have been realized on substrates of III-V semiconductors. Here, we demonstrate the selective area epitaxial growth of in-plane InAs nanowires and nanowire networks on Si substrates. We find that the selectivity of InAs growth on Si substrates is mainly dependent on the growth temperature, while the morphology of InAs nanowires is closely related to the V/III flux ratio. We examine the cross-sectional shapes and facets of the InAs nanowires grown along the , and orientations. Thanks to the non-polar characteristics of Si substrates, the InAs nanowires and nanowire networks exhibit superior symmetry compared to that grown on III-V substrates. The InAs nanowires and nanowire networks are zincblende (ZB) crystals, but there are many defects in the nanowires, such as stacking faults, twins and grain boundaries. The crystal quality of InAs nanowires and nanowire networks can be improved by increasing the growth temperature within the growth temperature window. Our work demonstrates the feasibility of selective area epitaxial growth of in-plane InAs nanowires and nanowire networks on Si substrates.

Growth of in As Nanowires with the Morphology and Crystal Structure Controlled by Carrier Gas Flow Rate

Ultrafast growth of single-crystalline Si nanowires

Method for preparing InAs nanowires with specific morphology and crystal structure

Growth of InAs NWs with controlled morphology by CVD

Controlled-Direction Growth of Planar InAsSb Nanowires on Si Substrates Without Foreign Catalysts

Effect of Carrier Gas Flow Rate on In2O3 Nanostructure Morphology and Growth Mechanism

Growth of InAs Quantum Dots on GaAs Nanowires by Metal Organic Chemical Vapor Deposition.

Selective area growth of in-plane InAs nanowires and nanowire networks on Si substrates by molecular-beam epitaxy

Silver-assisted growth of high-quality InAs 1- x Sb x nanowires by molecular-beam epitaxy

Controlled Synthesis of Phase-Pure InAs Nanowires on Si(111) by Diminishing the Diameter to 10 Nm.

Growth of Zinc Blende Gaas/Algaas Radial Heterostructure Nanowires by A Two-Temperature Process

H2-assisted control growth of Si nanowires

Generic Technique to Grow Iii-V Semiconductor Nanowires in A Closed Glass Vessel

Phase Selection in Self-catalyzed GaAs Nanowires

Dimension Engineering of Narrow Bandgap Semiconductor InAs Nanostructures in Wafer-Scale

In Situ TEM Observation of the Vapor–solid–solid Growth of <001̄> InAs Nanowires

Axiotaxy Driven Growth of Belt-Shaped InAs Nanowires in Molecular Beam Epitaxy

The effect of nanoscale steps on the self-catalyzed position-controlled InAs nanowire growth

Ultralow Feeding Gas Flow Guiding Growth of Large-Scale Horizontally Aligned Single-Walled Carbon Nanotube Arrays

Growth of High Material Quality Group III-Antimonide Semiconductor Nanowires by a Naturally Cooling Process

Self-catalyzed growth of sub-25-nm-diameter InAs nanowire arrays on Si patterned substrate