Abstract:The feature size of advanced Si-based chips is approaching its physical limit, and it is difficult to continue Moore's Law by simply pursuing the technical route of miniaturizing device size to increase the integrated density. III-V nanowire devices represented by InAs material have much higher mobility than Si based devices, but they have not been successfully applied to CMOS nanowire devices and have not shown excellent performance. The reason is that the hole mobility of III-V materials is much lower than their electron mobility. If the nanowire diameter becomes ultrafine, the quantum confinement effect becomes more prominent, the light hole band will reverse above the heavy hole band, and the hole mobility will be greatly increased. Aiming at the integrability of III-V high mobility CMOS devices on Si, how to prepare ultrafine InAs nanowire arrays on Si/SiO 2 patterned substrates has been studied in this work. New method in this work has solved the problem that the nanohole will enlarge due to etching side wall of nanohole by HF process before growth. A technology and mechanism of ultrafine InAs nanowire arrays grown by this method was developed, and the smallest diameter of nanowire in array has reached only 25 nm.

The effect of nanoscale steps on the self-catalyzed position-controlled InAs nanowire growth

Controlled-Direction Growth of Planar InAsSb Nanowires on Si Substrates Without Foreign Catalysts

Effect of Nanohole Size on Selective Area Growth of InAs Nanowire Arrays on Si Substrates

Self-Seeded MOCVD Growth and Dramatically Enhanced Photoluminescence of InGaAs/InP Core–Shell Nanowires

Growth of InAs Quantum Dots on GaAs Nanowires by Metal Organic Chemical Vapor Deposition.

Operating Principles of In-Plane Silicon Nanowires at Simple Step-Edges

Crystal structure analysis of self-catalyzed InAs nanowire grown by MOCVD

In Situ TEM Observation of the Vapor–solid–solid Growth of <001̄> InAs Nanowires

Crystal Phase Control in Self-Catalyzed GaAs Nanowires Grown on Pre-Etched Si Substrates

Catalyst-Free Heteroepitaxial MOCVD Growth of InAs Nanowires on Si Substrates

Self-catalyzed growth of sub-25-nm-diameter InAs nanowire arrays on Si patterned substrate

Controlled Synthesis of Phase-Pure InAs Nanowires on Si(111) by Diminishing the Diameter to 10 Nm.

New growth mechanism of InAs nanowires array in selective-area growth by MOCVD

Self‐catalysed Growth of InAs Nanowires on Bare Si Substrates by Droplet Epitaxy

Growth of InAs NWs with controlled morphology by CVD

Self-Nucleation Growth of Insb Nanowires Based on Indium Droplets under the Assistance of Au Nano-Particles by Mocvd

Sb-Induced Phase Control of Inassb Nanowires Grown by Molecular Beam Epitaxy

Self-Organized Growth of Nanowires on a Graphene Film

Growth of in As Nanowires with the Morphology and Crystal Structure Controlled by Carrier Gas Flow Rate

Nanostripe-Confined Catalyst Formation for Uniform Growth of Ultrathin Silicon Nanowires

InAs/GaSb Core-Shell Nanowires Grown on Si Substrates by Metal-Organic Chemical Vapor Deposition