Abstract:The direct observation of the Ni‐assisted GaP nanowire growth process via transmission electron microscopy reveals two different growth mechanisms by Trimethylgallium (TMGa) precursor supply variations. The decrease of TMGa flow results in the formation of Ni2P phase as growth promoters with cation exchange reaction in addition to interface diffusion as the mass transport pathway, leading to a much higher growth rate. Vapor–solid–solid (VSS) growth of III‐V semiconductor nanowires (NWs) has long been considered an alternative for the vapor–liquid–solid (VLS) growth mode, with the potential to avoid the incorporation of deep‐level impurities into semiconductors and to form compositionally abrupt interfaces. Most research however indicates that VSS growth has a much lower growth rate than observed in the VLS growth regime, explained by the very slow mass transport at the solid seed particle‐NW interface. In this study, the direct observation of the VSS growth of GaP NWs under different mechanisms is reported, by using Ni as a seed material inside an environmental transmission electron microscope. These results reveal that when NWs are grown from seed particles exhibiting the NiGa and Ni2Ga3 phases, classic VSS growth occurs with slow NW growth and interface diffusion as the dominant mass transport pathway. In contrast, when NWs are grown by seed particles containing Ni2P phase, rapid NW growth is observed together with a continuous reshaping of the seed particle. A cation exchange reaction is proposed as the predominant growth mechanism. This research results demonstrate an entirely new variant of the VSS growth mode, opening up new degrees of freedom for tuning NW properties.

Influence of Droplet Size on the Growth of High-Quality Self-Catalyzed Gaasp Nanowires

In Situ Manipulation of Growth Mechanisms in the Vapor–Solid–Solid Growth of GaP Nanowires

Doping of Self-Catalyzed Nanowires under the Influence of Droplets.

Manipulated Growth of Gaas Nanowires: Controllable Crystal Quality and Growth Orientations Via A Supersaturation-Controlled Engineering Process

Growth of Pure Zinc-Blende Gaas(P) Core-Shell Nanowires with Highly Regular Morphology

Self-Catalyzed Gaasp Nanowires Grown On Silicon Substrates By Solid-Source Molecular Beam Epitaxy

Understanding the Effect of Catalyst Size on the Epitaxial Growth of Hierarchical Structured InGaP Nanowires.

Growth of High-Quality Self-Catalyzed Core-Shell Gaasp Nanowires on Si Substrates

Controllable Ga/Ga 2 O 3 Nanowire Growth at High Temperatures Enabled by Au and Pd Quantum Dot Catalysts

Initialization of Nanowire or Cluster Growth Critically Controlled by the Effective V/III Ratio at the Early Nucleation Stage

-growth orientation dependence of Ga2O3 nanowires on Cu3As seeds via vapor-solid-solid mechanism

Growth of InAs Quantum Dots on GaAs Nanowires by Metal Organic Chemical Vapor Deposition.

Quantitative Study of GaAs Nanowires Catalyzed by Au Film of Different Thicknesses

High-Density, Defect-Free, and Taper-Restrained Epitaxial GaAs Nanowires Induced from Annealed Au Thin Films

The influence of an AlN seeding layer on nucleation of self-assembled GaN nanowires on silicon substrates

Effect of Nanohole Size on Selective Area Growth of InAs Nanowire Arrays on Si Substrates

Growth of Defect-Free InAs Nanowires Using Pd Catalyst

Vapor–liquid–solid growth of highly stoichiometric gallium phosphide nanowires on silicon: restoration of chemical balance, congruent sublimation and maximization of band-edge emission

Growth mechanism and diameter control of well-aligned small-diameter ZnO nanowire arrays synthesized by a catalyst-free thermal evaporation method.

Graphitic Platform for Self-Catalysed InAs Nanowires Growth by Molecular Beam Epitaxy

Catalytic Growth of Gallium Nitride Nanowires on Wet Chemically Etched Substrates by Chemical Vapor Deposition