Abstract:Development of heteroepitaxy growth of catalyst-free vertical III-V nanowires on Si wafers is highly desirable for future nanoscale Si-based electronic and optoelectronic devices. In this study, a proof-of-concept approach is developed for catalyst-free heteroepitaxy growth of InAs nanowires on Si wafers. Before the growth of InAs nanowires, a Si-compatible metallic film with a thickness of several tens of nanometers was predeposited on a Si wafer and then annealed to form nanosize openings so as to obtain a metallic mask. These nano-openings exposed the surface of the Si wafer, which allowed subsequent nucleation and growth of epitaxial InAs nanowires directly on the surface of the Si wafer. The small size of the nano-openings limits the lateral growth of the nanostructures but promotes their axial growth. Through this approach, catalyst-free InAs nanowires were grown on both Si (111) and (001) wafers successfully at different growth temperatures. In particular, ultralong defect-free InAs nanowires with the wurtzite structure were grown the Si (111) wafers at 550 °C using the Ni mask. This study offers a simple, cost-effective, and scalable method to grow catalyst-free III-V nanowires on Si wafers. The simplicity of the approach opens a new avenue for the growth and integration of catalyst-free high-quality heteroepitaxial III-V nanowires on Si wafers.

Understanding the Effect of Catalyst Size on the Epitaxial Growth of Hierarchical Structured InGaP Nanowires.

Catalyst Size Dependent Growth of Pd-Catalyzed One-Dimensional Inas Nanostructures

Growth of Defect-Free InAs Nanowires Using Pd Catalyst

The effect of V/III ratio and catalyst particle size on the crystal structure and optical properties of InP nanowires

Influence of Droplet Size on the Growth of High-Quality Self-Catalyzed Gaasp Nanowires

High-Density, Defect-Free, and Taper-Restrained Epitaxial GaAs Nanowires Induced from Annealed Au Thin Films

Diameter- and current-density-dependent growth orientation of hexagonal CdSe nanowire arrays via electrodeposition.

Quantitative Study of GaAs Nanowires Catalyzed by Au Film of Different Thicknesses

Palladium catalyzed defect-free zinc-blende structured InAs nanowires

In situ analysis of catalyst composition during gold catalyzed GaAs nanowire growth

The effect of V/III ratio on the morphology and structure of GaAs nanowires by MOCVD

Effect of Nanohole Size on Selective Area Growth of InAs Nanowire Arrays on Si Substrates

Growth of GaN Nanotubes and Nanowires on Au–Ni Catalysts

Polarity Driven Simultaneous Growth of Free-Standing and Lateral GaAsP Epitaxial Nanowires on GaAs (001) Substrate

Effects of Growth Rate on InP Nanowires Morphology and Crystal Structure

Tunable synthesis of In<sub>2</sub>O<sub>3</sub> nanowires, nanoarrows and nanorods

Crystallographically Driven Au Catalyst Movement During Growth of Inas/Gaas Axial Nanowire Heterostructures

Axiotaxy Driven Growth of Belt-Shaped InAs Nanowires in Molecular Beam Epitaxy

Synthesis and Characterization of Large-Scale Hierarchical Dendrites of Single-Crystal CdS

Manipulated Growth of Gaas Nanowires: Controllable Crystal Quality and Growth Orientations Via A Supersaturation-Controlled Engineering Process

Growth of Catalyst-Free Epitaxial InAs Nanowires on Si Wafers Using Metallic Masks.