Abstract:Growth of high quality III–V compound nanowires using simple chemical vapor deposition method with safe, inexpensive precursors is extremely important for a wide range of applications from solar cells, detectors, to light emitting devices. However, the most-often used deposition approach using compound powers suffers from incongruent sublimation of group III and V elements, leading to premature exhaust of group V elements and eventually to defective, non-stoichiometric nanowires with poor electronic and optical properties. In this paper, we report new results of our efforts in resolving these challenges using as an example the growth of GaP nanowires, an important widegap semiconductor. Our results reveal fascinating roles played by the elemental P source in addition to GaP powder such as restoration of chemical balance, inhabit of the incongruent sublimation of GaP, and the growth of highly stoichiometric GaP NWs with high optical quality and maximized band edge emission. The effects of growth parameters such as growth time, orientations of silicon substrate, growth temperature, and precursor combinations are studied and correlated to stoichiometry of NWs, and to the existence and degree of deep defect states and band edge emission. Our study sheds new light onto the important interplays among all these important factors. Our strategy is not only important for the growth of GaP nanowires on silicon but also for other III–V compounds as well using CVD and inexpensive compound powder sources.

The effect of V/III ratio and catalyst particle size on the crystal structure and optical properties of InP nanowires

The effect of V/III ratio on the morphology and structure of GaAs nanowires by MOCVD

Self-Seeded MOCVD Growth and Dramatically Enhanced Photoluminescence of InGaAs/InP Core–Shell Nanowires

Understanding the Effect of Catalyst Size on the Epitaxial Growth of Hierarchical Structured InGaP Nanowires.

Unit cell parameters of wurtzite InP nanowires determined by x-ray diffraction

Composition and optical properties of (In,Ga)As nanowires grown by group-III-assisted molecular beam epitaxy

Large-scale growth of In<sub>2</sub>O<sub>3</sub> nanowires and their optical properties

Tailoring the Optical Characteristics of Microsized InP Nanoneedles Directly Grown on Silicon

Alternate InP Synthesis with Aminophosphines: Solution-Liquid-Solid Nanowire Growth

Vapor–liquid–solid growth of highly stoichiometric gallium phosphide nanowires on silicon: restoration of chemical balance, congruent sublimation and maximization of band-edge emission

Group-III assisted catalyst-free growth of InGaAs nanowires and the formation of quantum dots

A low-temperature route to InP nanocrystals

Large-scale cubic InN nanocrystals by a combined solution- and vapor-phase method under silica confinement

Synthesis of [100] Wurtzite InN Nanowires and [011] Zinc-Blende InN Nanorods

Effect of the GaAsP shell on optical properties of self-catalyzed GaAs nanowires grown on silicon

Study of surface morphology control and investigation of hexagonal indium nitride nanorods grown on GaN/sapphire substrate

Structural, electrical and optical properties of InxGa1-xN nanowires photocathode

Sol-gel Synthesis and Photoluminescence of InP Nanocrystals Embedded in Silica Glasses

Anisotropies of the G-Factor Tensor and Diamagnetic Coefficient in Crystal-Phase Quantum Dots in InP Nanowires

Size control of InP nanowires by in-situ annealing and its application to the formation of InAsP quantum dots