Abstract:We report on a theoretical study of the electronic structures of InSb and GaSb nanowires oriented along the [001] and [111] crystallographic directions. The nanowires are described by atomistic, tight-binding models, including spin-orbit interaction. The band structures and the wave functions of the nanowires are calculated by means of a Lanczos iteration algorithm. For the [001]-oriented InSb and GaSb nanowires, the systems with both square and rectangular cross sections are considered. Here, it is found that all the energy bands are doubly degenerate. Although the lowest conduction bands in these nanowires show good parabolic dispersions, the top valence bands show rich and complex structures. In particular, the topmost valence bands of the nanowires with a square cross section show a double maximum structure. In the nanowires with a rectangular cross section, this double maximum structure is suppressed, and the top valence bands gradually develop into parabolic bands as the aspect ratio of the cross section is increased. For the [111]-oriented InSb and GaSb nanowires, the systems with hexagonal cross sections are considered. It is found that all the bands at the Γ-point are again doubly degenerate. However, some of them will split into non-degenerate bands when the wave vector moves away from the Γ-point. Although the lowest conduction bands again show good parabolic dispersions, the topmost valence bands do not show the double maximum structure. Instead, they show a single maximum structure with its maximum at a wave vector slightly away from the Γ-point. The wave functions of the band states near the band gaps of the [001]- and [111]-oriented InSb and GaSb nanowires are also calculated and are presented in terms of probability distributions in the cross sections. It is found that although the probability distributions of the band states in the [001]-oriented nanowires with a rectangular cross section could be qualitatively described by one-band effective mass theory, the probability distributions of the band states in the [001]-oriented nanowires with a square cross section and the [111]-oriented nanowires with a hexagonal cross section show characteristic patterns with symmetries closely related to the irreducible representations of the relevant double point groups and, in general, go beyond the prediction of a simple one-band effective mass theory. We also investigate the effects of quantum confinement on the band structures of the [001]- and [111]-oriented InSb and GaSb nanowires and present an empirical formula for the description of quantization energies of the band edge states in the nanowires, which could be used to estimate the enhancement of the band gaps of the nanowires as a result of quantum confinement. The size dependencies of the electron and hole effective masses in these nanowires are also investigated and discussed.

Unit cell parameters of wurtzite InP nanowires determined by x-ray diffraction

Measurements of Strain and Bandgap of Coherently Epitaxially Grown Wurtzite InAsP-InP Core-Shell Nanowires.

Effect of the crystal structure on the optical properties of InP nanowires

First-Principles Study of the Electronic Properties of Wurtzite, Zinc-Blende, and Twinned Inp Nanowires

Revealing Misfit Dislocations in InAsxP1−x-InP Core–shell Nanowires by X-Ray Diffraction

Probing strain in wurtzite InP-InAs core-shell nanowires with Raman spectroscopy

Electronic Structure of [100]-Oriented Free-Standing Inas and Inp Nanowires with Square and Rectangular Cross Sections

Electronic Structures of [1 1 1]-Oriented Free-Standing InAs and InP Nanowires

Anisotropies of the G-Factor Tensor and Diamagnetic Coefficient in Crystal-Phase Quantum Dots in InP Nanowires

The effect of V/III ratio and catalyst particle size on the crystal structure and optical properties of InP nanowires

Controllable Growth and Optical Properties of Inp and Inp/Inas Nanostructures on the Sidewalls of Gaas Nanowires

Electronic Structures of [001]- and [111]-Oriented Insb and Gasb Free-Standing Nanowires

Synthesis of [100] Wurtzite InN Nanowires and [011] Zinc-Blende InN Nanorods

Probing the Valence Band Structure of Wurtzite InP Nanowires by Photoluminescence Excitation Spectroscopy

Probing Valence Band Structure In Wurtzite Inp Nanowires Using Excitation Spectroscopy

Value and Anisotropy of the Electron and Hole Mass in Pure Wurtzite InP Nanowires

Wide InP nanowires with wurtzite/zincblende superlattice segments are type-II whereas narrower nanowires become type-I: an atomistic pseudopotential calculation.

The Electronic Structures of AlN and InN Wurtzite Nanowires

First-principles calculation of electronic structures and optical properties of wurtzite InxAl1−xN alloys

Illuminating the second conduction band and spin-orbit energy in single wurtzite InP nanowires.

All-electron study of InAs and GaAs wurtzite: structural and electronic properties