Abstract:GaN nanomaterials, as one of the most important third-generation semiconductor materials, have attracted wide attention. In this study, GaN nanowires with square cross section were successfully prepared by microwave plasma chemical vapor deposition system. The diameters of nanowires are from 300 to 500 nm and the lengths from 15 to 20 μm. The results show that the cross section of nanowires could be transformed from triangle into square by adjusting the ratio of Mg to Ga in source materials. X-ray diffraction(XRD)result indicate that the structure of GaN nanowires are agree with the hexagonal wurtzite. X-ray photoelectron spectroscopy (XPS) rusult show that a certain amount of Mg and O impurities incoporated in the square-shaped GaN nanowires. Transmission electron microscopy (TEM) result suggested that square-shaped GaN nanowires had high crystallinity with a growth direction of [\begin{document}$0\bar 110$\end{document}]. The ratio of source materials- and time-depented growth mechanism was also studied. It was suggested that the transformation of the cross section from triangle to square structure should be derived from the growth mechanism change from vapor-liquid-solid(VLS)process to vapor-solid(VS)process. The doped Mg increased the growth rate of the nanowires sidewalls, which led to a symmetrically growth of GaN nanowires along the twin boundaries. GaN nanowires gradually transformed to square structure by auto-catalytic growth. Moreover, the property of field emission were further investigated. The results showed that the turn-on electric field of square-shaped GaN nanowires was 5.2 V/m and a stable field emission property at high electric field. This research provides a new method for the preparation of square-shaped GaN nanowires and a prospective way for the design and fabrication of novel nano-scale devices.

Monte carlo simulation of planar GaAs nanowire growth

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Interface dynamics and crystal phase switching in GaAs nanowires

Structural Modulation of GaN Nanowires Grown in High-Density Plasma Environment

Controlled-Direction Growth of Planar InAsSb Nanowires on Si Substrates Without Foreign Catalysts

Growth Mechanism of Monolayer on the Top Facet of Ga-Catalyzed GaAs and GaP Nanowires

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Preparation, Doping Modulation and Field Emission Properties of Square-Shaped GaN Nanowires

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Vapor-liquid-solid growth of serrated GaN nanowires: Shape selection driven by kinetic frustration

Modulation Effects of Hydrogen on Structure and Photoluminescence of GaN Nanowires Prepared by Plasma-Enhanced Chemical Vapor Deposition

The effect of V/III ratio on the morphology and structure of GaAs nanowires by MOCVD

Phase Selection in Self-catalyzed GaAs Nanowires

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Growth Mechanisms of GaN/GaAs Nanostructures by Droplet Epitaxy Explained by Complementary Experiments and Simulations

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Selective Area Growth Rates of III-V Nanowires

VLS-HVPE growth of ultra-long and defect-free GaAs nanowires investigated by ab initio simulation coupled to near-field microscopy

Intrinsic limits governing MBE growth of Ga-assisted GaAs nanowires on Si(111)

Crystallographic Alignment of High Density Gallium Nitride Nanowire Arrays

Step-flow growth of III-V nanowire layers