Effects of Gas Parameters on Properties of In2O3 Thin Films Deposited by Magnetron Sputtering

CAI Xi-kun,YUAN Zi-jian,ZHU Xia-ming,ZHANG Bing-po,QIU Dong-jiang,WU Hui-zhen

DOI: https://doi.org/10.16553/j.cnki.issn1000-985x.2011.01.044

2011-01-01

Abstract:In2O3 thin films were prepared by R.F.magnetron sputtering.The effect of sputtering pressure and sputtering gas on the structure,photoelectric properties of In2O3 thin films were investigated.The X-ray diffraction(XRD) analysis shows that the films are polycrystalline and retain a cubic structure.As the sputtering pressure increasing,the grain size of In2O3 thin film increases.The film deposited at the pressure of 1 Pa has the highest mobility of 15.2 cm2/V·s and the lowest carrier concentration of 1.19×1019 cm-3.The carrier concentration of the film grown in O2 atmosphere decreases to 4.39×1013 cm-3 and the average optical transmittance in the infrared region(1.5-5.5 μm) reaches 85%,which is higher than that of the films grown in Ar atmosphere.It can be explained that the addition of O2 in sputtering resulted in oxygen vacancies decrease which leads to the reduction of the carrier concentration and the decrease of absorption of free carrier in the infrared region.