Effect of technologic parameters on the performances of ZAO thin films deposited by magnetron sputtering

Engang Fu,Darning Zhuang,Gong Zhang,Yaqi Hou,MinSheng Wu
2002-01-01
Rare Metal Materials and Engineering
Abstract:ZAO (ZnO:Al) transparent conductive thin films have been prepared by middle-frequency alternative magnetron sputtering with ZAO (98%ZnO+2%Al2O3) ceramic target. The influences of substrate temperature and operation gas pressure (argon gas pressure: P-Ar) on the microstructure, optical and electrical performances of ZAO films have been studied. The visible transmittance, carrier concentration and Hall mobility were investigated by UV-VIS and Van der Pauw, respectively, while microstructure was charactered by X-ray diffraction (XRD). Atomic force microscope (AFM) was used for investigation of the morphology of obtained films. The results show that substrate temperature and operation gas pressure are two dominant factors for variable microstructure, optical and electrical performances of the ZAO thin films. The lowest resistivity obtained in this study was 4.6 X 10(-4) Omega.cm for the film with visible (lambda = 550nm) transmittance of 91.8% and sheet resistance of 32 Omega, which was deposited at the substrate temperature of 250degreesC and operation gas pressure of 0.8Pa.
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