Effect of Substrate Temperature on Performance of ZAO Thin Films Deposited by Magnetron Sputtering

付恩刚,庄大明,张弓,方玲,梁展鸿,吴敏生,杨伟方
DOI: https://doi.org/10.3969/j.issn.1672-7126.2003.01.004
2003-01-01
Abstract:ZAO(ZnO:Al) transparent conductive thin films were prepared by medium-frequency alternative magnetron sputtering with ZAO[ω(ZAO)=98% and ω(Al 2O 3=2%] ceramic target materials. The influence of substrate temperature on the microstructure, optical and electric properties of ZAO films was studied. The visible transmittance, carrier concentration and Hall mobility were investigated by UVVIS and Van der Pauw, while the microstructure was characterized by X-ray diffraction. The lowest resistivity is 4.6×10 -4Ω·cm for the film with a visible (λ=550 nm) transmittance of 92% and a square resistance of 35 Ω, which was deposited at the substrate temperature of 250°C and the operation gas pressure of 0.8 Pa.
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