Abstract:Mg(x)Zn(1-x)O thin films were grown by the radio-frequency magnetron sputtering technique in Ar + N(2) and O(2) + N(2) ambient with different nitrogen partial pressure ratios on quartz substrates at 773 K. The correlations between the growth ambient and the resultant films properties were discussed. It is found that Mg concentration, structure and band gap of the MgZnO film can be tuned by increasing the nitrogen partial pressure ratio of the Ar + N(2) ambient, but cannot be tailored by changing the nitrogen partial pressure ratio of the O(2) + N(2) ambient. X-ray diffraction shows that the Mg(x)Zn(1-x)O films grown in the Ar + N(2) ambient consist of wurtzite phase at the nitrogen partial pressure ratios from 0% to 50%, a mixture of wurtzite and cubic phases at the ratios of 78-83%, and a cubic phase at 100%, whereas such structure transformation did not exist in the Mg(x)Zn(1-x)O film deposited in the O(2) + N(2) ambient by changing the nitrogen partial pressure ratio. The Mg concentration increases linearly with the increasing nitrogen partial pressure ratio of Ar + N(2), but does not vary with the increasing nitrogen partial pressure ratio of O(2) + N(2). The band gap increases linearly from 3.64 to 4.02 eV for the wurtzite Mg(x)Zn(1-x)O deposited in the Ar + N(2) ambient as nitrogen partial pressure ratio increases from 0% to 50%, but the band gap of the Mg(x)Zn(1-x)O film deposited in the O(2) + N(2) ambient keeps a constant of 3.63 eV with oxygen gas and reaches 6.30 eV abruptly in pure nitrogen ambient (without oxygen gas). The Mg(x)Zn(1-x)O films, which are grown in the Ar + N(2) and O(2) + N(2) ambient at nitrogen partial pressure ratio from 50% to 100% and 83% to 100%, respectively, show p-type conduction after annealing.

Effect of Sputtering Ambient on The Properties of N Doped ZnO Thin Films

Microstructure and Optical Properties of ZnO Films Deposited by Radio-frequency Reactive Magnetron Sputtering

The Effects of Oxygen Partial Pressure and Substrate Temperature on the Structural and Optical Properties of Zno Films

Influence of O_2/Ar Flow Ratio on Microstructures and Photoluminescence of ZnO Films

Surface Morphology and Optical Properties of Na-doped ZnO Thin Films

Effect of Na Concentrations on Microstructure and Optical Properties of Zno Films

Effect of Solution Concentrations on Crystal Structure, Surface Topographies and Photoluminescence Properties of ZnO Thin Films

Influence of Dopant Content on Morphology and Optical Constants of ZnO:Na Films by Sol-Gel Method

Optical and Electrical Properties of N-doped ZnO and Fabrication of Thin-Film Transistors

Effect Of Growth Ambient On The Structure And Properties Of Mg(X)Zn(1-X)O Thin Films Prepared By Radio-Frequency Magnetron Sputtering

Effect of Oxygen Partial Pressure Ratios on the Properties of Al–N Co-Doped ZnO Thin Films

Effects of Hydrogen Flux on Aluminum Doped Zinc Thin Films by Pulsed Magnetron Sputtering

Properties of N-doped ZnO thin films in annealing process

Preparation and Characterization of N Doped P-type MgZnO Film

Effect of different growth conditions on the electrical properties of Sn doped ZnO thin films

Effect of substrate and substrate temperature on microstructure of magnetron sputtering doped-ZnO thin films

Effects of Nitrogen Doping and Illumination on Lattice Constants and Conductivity Behavior of Zinc Oxide Grown by Magnetron Sputtering

Effect of Na Doping Content on the Structural and Electrical Properties of ZnO∶Nax Films

Effects of Sputtering Pressure on Properties of Al Doped Zno Thin Films Dynamically Deposited by Rf Magnetron Sputtering

Effects of RF power variation on properties of N-doped p-type ZnO thin films grown by plasma-assisted MOCVD

Effect of the Substrate Temperature on the Property of ZnO Films Deposited by Magnetron Sputtering with DC at the Low Power