Abstract:Results are presented for modelling of the evaporation and magnetron sputter deposition of Zn(x)O(y) onto an O-terminated ZnO (0001¯) wurtzite surface. Growth was simulated through a combination of molecular dynamics (MD) and an on-the-fly kinetic Monte Carlo (otf-KMC) method, which finds diffusion pathways and barriers without prior knowledge of transitions. We examine the effects of varying experimental parameters, such as substrate bias, distribution of the deposition species and annealing temperature. It was found when comparing evaporation and sputtering growth that the latter process results in a denser and more crystalline structure, due to the higher deposition energy of the arriving species. The evaporation growth also exhibits more stacking faults than the sputtered growth. Post-annealing at 770 K did not allow complete recrystallization, resulting in films which still had stacking faults where monolayers formed in the zinc blende phase, whereas annealing at 920 K enabled the complete recrystallization of some films to the wurtzite structure. At the latter temperature atoms could also sometimes be locked in the zinc blende phase after annealing. When full recrystallization did not take place, both wurtzite and zinc blende phases were seen in the same layer, resulting in a phase boundary. Investigation of the various distributions of deposition species showed that, during evaporation, the best quality film resulted from a stoichiometric distribution where only ZnO clusters were deposited. During sputtering, however, the best quality film resulted from a slightly O rich distribution. Two stoichiometric distributions, one involving mainly ZnO clusters and the other involving mainly single species, showed that the distribution of deposition species makes a huge impact on the grown film. The deposition of predominantly single species causes many more O atoms at the surface to be sputtered or reflected, resulting in an O deficiency of up to 18% in the deposited film and therefore resulting in more stacking faults and phase boundaries. The methods used allow analysis of key mechanisms that occur during the growth process and give hints as to the optimum conditions under which complete crystalline layers can form.

Oxidants in ZnO Thin Film Growth by LP-MOCVD

Mist CVD Growth of ZnO-Based Thin Films and Nanostructures

Influence of O_2/Ar Flow Ratio on Microstructures and Photoluminescence of ZnO Films

Influence of Oxidant Source on Properties of ZnO Films Deposited by Atomic Layer Deposition

Effects of Oxygen Source Ionization on the Growth and Properties of MOCVD ZnO Material

Growth of ZnO Film by Plasma-assisted MOCVD

Mocvd Growth and Properties of Zno Films Using Dimethylzinc and Oxygen

Study of ZnO Film Grown by MOCVD

Structural and Optical Characterizations of ZnO Films Grown by Reactive Electron Beam Evaporation

STRUCTURAL AND OPTICAL STUDIES OF ZnO FILMS GROWN AT LOW TEMPERATURE

MOCVD growth and properties of ZnO and Zn1-xMgxO films

LP-MOCVD Growth and Properties of Zn1－xMgxO Thin Film

Study on the Properties of ZnO Films Prepared by Photo-assisted MOCVD

Orthogonal Design for Fabrication of ZnO Thin Films by MOCVD

Effect of O_2 Flow Rate on the Properties and Growth of ZnO Thin Films

Oxygen-induced physical property variation of deposited ZnO films by metal-organic chemical vapor deposition

Preparation and study of stoichiometric ZnO by MOCVD technique

Effect of Oxygen Pressure on the Growth Behavior and Optical Properties of ZnO Films

Spectroscopic characterization of the plasmas formed during the deposition of ZnO and Al-doped ZnO films by plasma-assisted pulsed laser deposition

Modelling the growth of ZnO thin films by PVD methods and the effects of post-annealing

Study of Zno Film Growth by Reactive Magnetron Sputtering Using Plasma Emission Spectra