MOCVD growth and properties of ZnO and Zn1-xMgxO films

youdou zheng,shulin gu,jiandong ye,wei liu,shunmin zhu,feng qin,liqun hu,rong zhang,y j shi
DOI: https://doi.org/10.1109/COS.2003.1278155
2003-01-01
Abstract:In this work, the high-quality ZnO based films were epitaxially deposited by low-pressure metal organic chemical vapor deposition (LP-MOCVD) technique. The characteristics of ZnO films were studied as a function of the growth conditions such as the growth temperatures, and the flow ratio of II/VI, which dramatically affect the structure and the associated optical properties of the epilayer. The spontaneous emission spectrum measured at the low temperature of 4 K shows an emission peak related to donor-bound exciton at the full width of 2 nm, indicating rather high-quality of the ZnO epilayer obtained by optimizing the above growth conditions. The Zn1-xMgxO alloy thin film has been grown with the incorporation of Mg at a maximum value of x=0.22. The structure and optical properties of Zn1-xMgxO alloy thin film has then been discussed briefly.
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