Effects of Oxygen Source Ionization on the Growth and Properties of MOCVD ZnO Material

Li Feng,Gu Shulin,Ye Jiandong,Zhu Shunming,Zhang Rong,Zheng Youdou
DOI: https://doi.org/10.3969/j.issn.1674-4926.2007.03.021
2007-01-01
Chinese Journal of Semiconductors
Abstract:ZnO thin films were deposited with low-pressure MOCVD at different substrate temperatures.The effects of oxygen source ionization on the growth and properties of MOCVD ZnO material were investigated.The crystal structure and surface morphology of ZnO films were characterized by X-ray diffraction and atomic force microscopy,respectively.Room temperature and low temperature photoluminescence were used to investigate the optical properties of ZnO.It was found that the ionization of the oxygen source has a marked influence on the growth rate,crystal orientation,surface morphology,and other properties
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