Abstract:Results are presented for modelling of the evaporation and magnetron sputter deposition of Zn(x)O(y) onto an O-terminated ZnO (0001¯) wurtzite surface. Growth was simulated through a combination of molecular dynamics (MD) and an on-the-fly kinetic Monte Carlo (otf-KMC) method, which finds diffusion pathways and barriers without prior knowledge of transitions. We examine the effects of varying experimental parameters, such as substrate bias, distribution of the deposition species and annealing temperature. It was found when comparing evaporation and sputtering growth that the latter process results in a denser and more crystalline structure, due to the higher deposition energy of the arriving species. The evaporation growth also exhibits more stacking faults than the sputtered growth. Post-annealing at 770 K did not allow complete recrystallization, resulting in films which still had stacking faults where monolayers formed in the zinc blende phase, whereas annealing at 920 K enabled the complete recrystallization of some films to the wurtzite structure. At the latter temperature atoms could also sometimes be locked in the zinc blende phase after annealing. When full recrystallization did not take place, both wurtzite and zinc blende phases were seen in the same layer, resulting in a phase boundary. Investigation of the various distributions of deposition species showed that, during evaporation, the best quality film resulted from a stoichiometric distribution where only ZnO clusters were deposited. During sputtering, however, the best quality film resulted from a slightly O rich distribution. Two stoichiometric distributions, one involving mainly ZnO clusters and the other involving mainly single species, showed that the distribution of deposition species makes a huge impact on the grown film. The deposition of predominantly single species causes many more O atoms at the surface to be sputtered or reflected, resulting in an O deficiency of up to 18% in the deposited film and therefore resulting in more stacking faults and phase boundaries. The methods used allow analysis of key mechanisms that occur during the growth process and give hints as to the optimum conditions under which complete crystalline layers can form.

Numerical and Experimental Comparative Study of Metal-Organic Chemical Vapor Deposition of ZnO

Simulation of the Mocvd Reactor for Zno Growth

The growth of nanoscale ZnO films by pulsed-spray evaporation chemical vapor deposition and their structural, electric and optical properties

Modeling Analysis of the Mocvd Growth of Zno Film

Effect of Nucleation and Growth Kinetics on the Electrical and Optical Properties of Undoped ZnO Films

Mist CVD Growth of ZnO-Based Thin Films and Nanostructures

Zno-based Thin Films Synthesized by Atmospheric Pressure Mist Chemical Vapor Deposition

Simulation and experimental verification study on the process parameters of ZnO-MOCVD

Advances in Research on Deposition Techniques for ZnO Thin Films

Competitive Adsorption and Two-Site Occupation Effects in Metal-Organic Chemical Vapor Deposition of Zno

The Effects of Oxygen Partial Pressure and Substrate Temperature on the Structural and Optical Properties of Zno Films

Simulation of the ZnO-MOCVD Horizontal Reactor Geometry

Optimization study of metal-organic chemical vapor deposition of ZnO on sapphire substrate

Simulation and Suppression of the Gas Phase Pre-Reaction in Metal-Organic Chemical Vapor Deposition of Zno

Oxidants in ZnO Thin Film Growth by LP-MOCVD

Growth Parameters and Substrate Treatment for the MOCVD Growth of ZnO

Structural and Optical Characterizations of ZnO Films Grown by Reactive Electron Beam Evaporation

Modelling the growth of ZnO thin films by PVD methods and the effects of post-annealing

Comparative Study of the Effect of H2 Addition on ZnO Films Grown by Different Zinc and Oxygen Precursors

Comparison of Structural and Optical Properties of ZnO Films Grown on Different Substrates at Low Temperatures

Simulation-Assisted Design of Metal Organic Chemical Vapor Deposition Reactor