Abstract:Chemical vapor deposition (CVD) is a crucial technique to prepare high-quality graphene because of its controllability. In the research, we perform a systematic computational fluid dynamics numerical investigation on the effect of gas-phase reaction dynamics on the graphene growth in a horizontal tube CVD reactor. The research results indicate that the gas-phase chemical reactions in the CVD reactor are in a nonequilibrium state, as evidenced by the comparison of species mole fraction distributions during the CVD process and under chemical equilibrium conditions. The effect of gas-phase reaction dynamics on the deposition rate of graphene under different conditions is studied, and our research shows that the main causes of change in graphene growth rates under different conditions are gas-phase reaction dynamics and active species transport. The results of numerical simulation agree well with the experimental phenomena. The research results also indicate that, for methane, the main limiting factor of graphene growth is the surface kinetic reaction rate. Conversely, for active species, the main limiting factor of graphene growth is species transport. Our research suggests that the growth rate of graphene can be regulated from the perspective of the gas reaction mechanism. This method has theoretical guiding significance and can be extended to the preparation of large-area graphene.

What problem does this paper attempt to address?

### Problems Addressed by the Paper The paper primarily explores the impact of gas-phase kinetics on graphene growth during the chemical vapor deposition (CVD) process. Specifically, the study systematically analyzes the effect of gas-phase reaction kinetics on the graphene growth rate in a horizontal tube CVD reactor through numerical simulation methods. #### Research Background and Objectives - **Importance of Graphene**: Graphene is a two-dimensional material composed of a single layer of carbon atoms. It has high carrier mobility, high thermal conductivity, high specific surface area, and good mechanical flexibility, making it highly promising for applications in efficient cooling devices, energy storage, and flexible wearable devices. - **Chemical Vapor Deposition (CVD) Technology**: CVD technology has become an important means of preparing high-quality graphene due to its controllability. However, due to the complex chemical reactions in CVD reactors and the various influencing factors under high-temperature conditions, experimental measurements are relatively difficult. - **Impact of Gas-Phase Reaction Kinetics**: Experiments have shown that gas-phase reaction kinetics affect the concentration of reactants above the substrate, thereby influencing the graphene growth rate. However, previous studies mainly focused on the impact of surface reactions on the substrate on graphene growth behavior, lacking quantitative numerical simulation studies to explore the specific impact of gas-phase reaction kinetics. #### Research Methods - **Computational Fluid Dynamics (CFD) Model**: By establishing a geometric model of the CVD reactor, configuring boundary conditions, and using a chemical reaction model to calculate the decomposition reaction of methane diluted in hydrogen. - **Numerical Simulation Results**: The study found that the gas-phase chemical reactions in the CVD reactor are in a non-equilibrium state, and the changes in gas-phase species are mainly determined by gas-phase reaction kinetics and the transport of active species. #### Main Conclusions - **Variation in Graphene Growth Rate under Different Conditions**: When the copper substrate is placed independently at seven positions, the graphene growth rate gradually increases; when the copper substrate is placed simultaneously at positions 1-7, the increased deposition rate of active species offsets the decrease in methane deposition rate, leading to a uniform graphene growth rate at each position; when the copper substrate is placed only at positions 4-7, the deposition rates of both active species and methane decrease, resulting in a reduced graphene growth rate. - **Limiting Factors Analysis**: For methane, the main limiting factor for graphene growth is the surface kinetic reaction rate; for active species, the main limiting factor is species transport. #### Application Value - This study proposes a method to regulate the graphene growth rate from the perspective of gas reaction mechanisms, which has theoretical guiding significance and can be extended to the preparation of large-area graphene.

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