Abstract:In recent years, liquid metal catalysts have emerged as a compelling choice for the controllable, large-scale, and high-quality synthesis of two-dimensional materials. At present, there is little mechanistic understanding of the intricate catalytic process, though, of its governing factors or what renders it superior to growth at the corresponding solid catalysts. Here, we report on a combined experimental and computational study of the kinetics of graphene growth during chemical vapor deposition on a liquid copper catalyst. By monitoring the growing graphene flakes in real time using in situ radiation-mode optical microscopy, we explore the growth morphology and kinetics over a wide range of CH4-to-H2 pressure ratios and deposition temperatures. Constant growth rates of the flakes' radius indicate a growth mode limited by precursor attachment, whereas methane-flux-dependent flake shapes point to limited precursor availability. Large-scale free energy simulations enabled by an efficient machine-learning moment tensor potential trained to density-functional theory data provide quantitative barriers for key atomic-scale growth processes. The wealth of experimental and theoretical data can be consistently combined into a microkinetic model that reveals mixed growth kinetics that, in contrast to the situation at solid Cu, is partly controlled by precursor attachment alongside precursor availability. Key mechanistic aspects that directly point toward the improved graphene quality are a largely suppressed carbon dimer attachment due to the facile incorporation of this precursor species into the liquid surface and a low-barrier ring-opening process that self-heals 5-membered rings resulting from remaining dimer attachments.

Molecular Understanding of the Effect of Hydrogen on Graphene Growth by Plasma-Enhanced Chemical Vapor Deposition

The nucleation and growth of graphene under a controlled atmosphere during radio frequency-plasma-enhanced chemical vapor deposition

The Role of Hydrogen in Oxygen-Assisted Chemical Vapor Deposition Growth of Millimeter-Sized Graphene Single Crystals

Etching Effect of Hydrogen and Oxygen on the Chemical Vapor Deposition Graphene on Cu

Growth of Graphene on Cu Foils by Microwave Plasma Chemical Vapor Deposition: the Effect of In-Situ Hydrogen Plasma Post-Treatment

Molecular dynamics simulation study of graphene synthesis by rotating arc plasma

Dominant Kinetic Pathways of Graphene Growth in Chemical Vapor Deposition: The Role of Hydrogen

The Role of Hydroxyl and Atomic Oxygen in Multiwall Carbon Nanotube Growth

The role of per-hydroxyl in the multiwall carbon nanotube growth by PECVD

Kinetics of Hydrogen Constrained Graphene Growth on Cu Substrate

A Growth Mechanism for Graphene Deposited on Polycrystalline Co Film by Plasma Enhanced Chemical Vapor Deposition

Critical Crystal Growth of Graphene on Dielectric Substrates at Low Temperature for Electronic Devices.

Growth Control Strategy of Hydrogen-Containing Nanocrystalline Carbon Films during Plasma-Enhanced Chemical Vapor Deposition based on Molecular Dynamics-Monte Carlo Simulations

Numerical investigation on the effect of gas-phase dynamics on graphene growth in chemical vapor deposition

The Effect of Relatively Low Hydrogen Dilution on the Properties of Carbon-Rich Hydrogenated Amorphous Silicon Carbide Films

Nucleation and growth of graphene at different temperatures by plasma enhanced chemical vapor deposition

Methane as an effective hydrogen source for single-layer graphene synthesis on Cu foil by plasma enhanced chemical vapor deposition

Operando Characterization and Molecular Simulations Reveal the Growth Kinetics of Graphene on Liquid Copper during Chemical Vapor Deposition

Advancements in Plasma-Enhanced Chemical Vapor Deposition for Producing Vertical Graphene Nanowalls

Chemical Vapor Deposition Growth of Graphene using Other Hydrocarbon Sources

Effects of hydrogen/carbon molar ratio on graphene nano-flakes synthesis by a non-thermal plasma process