Abstract:Rapid synthesis of CVD graphene film of up to 900 cm2 for each batch of growth in a 1-inch furnace by a unique configuration assembly of Cu foil and a porous mediator.The large area of the high-quality graphene film exhibits a high crystallinity (ID/IG: 0.16) and high electrical conductivity (760 Ω/sq).The experimental study together with the multiphysical simulation indicates that the porous mediator enhances the gas diffusion and reaction kinetics and improves the crystallinity and growth rate of graphene.Improving the interdiffusion of reactive species results in homogeneous nucleation and equivalent kinetic growth.The yield rate for the synthesis of large-area and high-quality graphene, based on the chemical vapor deposition (CVD) method, is limited by the reactor size of a tubular furnace. Additionally, the reported methods to achieve a high-throughput process are still challenging. Currently, the rolled-up or vertically stacked configuration setup is applied to increase the loading growth. However, the reported methods limit the kinetic reaction of CVD growth and lead to the degradation of the uniformity and crystallinity of as-grown graphene.Here, we propose a novel method to produce a high-yield and uniform monolayer graphene film by helical stacking of Cu with highly porous carbon cloth as an efficient interdiffusion mediator. Additionally, computational fluid dynamics (CFD) is applied to simulate the dynamic distribution within the mediator.This method allows the rapid synthesis of graphene films of up to 900 cm2 for each batch of growth in a 1-inch furnace. Graphene with optimized conditions exhibits a high crystallinity (ID/IG: 0.16) and electrical conductivity (760 Ω/sq). The comprehensive study on recipe optimization together with the multiphysical simulation suggests that the proposed carbon cloth is an ideal spacing mediator for CVD graphene with a high Cu-loading density. This enhancement is attributed to the homogeneous interdiffusion of reactive gas/species in both the transverse and radial directions, resulting in homogeneous nucleation and equivalent kinetic growth. The capacity could reach 15.56 m2/hour in an 8-inch system. The CFD simulation indicates that the porous mediator can improve gas distribution and balance the pressure between the Cu foils to enhance high-yield graphene synthesis. This method provides an efficient strategy for the synthesis of high-throughput and large-area CVD graphene films, which is beneficial for cost-effective and versatile graphene-based applications.Download : Download high-res image (203KB)Download : Download full-size image

A Growth Mechanism for Graphene Deposited on Polycrystalline Co Film by Plasma Enhanced Chemical Vapor Deposition

Heteroepitaxial Growth Of Wafer Scale Highly Oriented Graphene Using Inductively Coupled Plasma Chemical Vapor Deposition

Nucleation and growth dynamics of graphene grown by radio frequency plasma-enhanced chemical vapor deposition

Direct Formation of Wafer-Scale Single-Layer Graphene Films on the Rough Surface Substrate by PECVD

Critical Crystal Growth of Graphene on Dielectric Substrates at Low Temperature for Electronic Devices.

Growth and Atomic-Scale Characterizations of Graphene on Multifaceted Textured Pt Foils Prepared by Chemical Vapor Deposition

First-Principles Investigations on the Adsorption and Diffusion of Carbon Atoms on the Surface and in the Subsurface of Co (111) Related to the Growth of Graphene

The nucleation and growth of graphene under a controlled atmosphere during radio frequency-plasma-enhanced chemical vapor deposition

Molecular Understanding of the Effect of Hydrogen on Graphene Growth by Plasma-Enhanced Chemical Vapor Deposition

A comparative study of graphene growth by APCVD, LPCVD and PECVD

Growth of Graphene on Cu Foils by Microwave Plasma Chemical Vapor Deposition: the Effect of In-Situ Hydrogen Plasma Post-Treatment

Graphene: Near‐Equilibrium Chemical Vapor Deposition of High‐Quality Single‐Crystal Graphene Directly on Various Dielectric Substrates (adv. Mater. 9/2014)

Effect of Ni film structure and surface morphology on the growth of graphene by PECVD

Efficient Growth Of High-Quality Graphene Films On Cu Foils By Ambient Pressure Chemical Vapor Deposition

Phase Diagram of growth modes in Graphene Growth on Cooper by Vapor Deposition

Feasibility and Structural Transformation of Electrodeposited Copper Foils for Graphene Synthesis by Plasma‐Enhanced Chemical Vapor Deposition: Implications for High‐Frequency Applications

Influence of Growth Time and Temperature on Optical Characteristics and Surface Wetting in Nano-Crystalline Graphene Deposited by PECVD Directly on Silicon Dioxide

Oxide-assisted Growth of Scalable Single-Crystalline Graphene with Seamlessly Stitched Millimeter-Sized Domains on Commercial Copper Foils.

Near-equilibrium Chemical Vapor Deposition of High-Quality Single-Crystal Graphene Directly on Various Dielectric Substrates.

Toward large-scale CVD graphene growth by enhancing reaction kinetics via an efficient interdiffusion mediator and mechanism study utilizing CFD simulations

Graphene Growth by Transfer-Free CVD Method Using Cobalt/Nickel Catalyst Layer