Abstract:Graphene is the most broadly discussed and studied two‐dimensional material because of its preeminent physical, mechanical, optical, and thermal properties. Until now, metal‐catalyzed chemical vapor deposition (CVD) has been widely employed for the scalable production of high‐quality graphene. However, in order to incorporate the graphene into electronic devices, a transfer process from metal substrates to targeted substrates is inevitable. This process usually results in contamination, wrinkling, and breakage of graphene samples ‐ undesirable in graphene‐based technology and not compatible with industrial production. Therefore, direct graphene growth on desired semiconductor and dielectric substrates is considered as an effective alternative. Over the past years, there have been intensive investigations to realize direct graphene growth using CVD methods without the catalytic role of metals. Owing to the low catalytic activity of non‐metal substrates for carbon precursor decomposition and graphene growth, several strategies have been designed to facilitate and engineer graphene fabrication on semiconductors and insulators. Here, those developed strategies for direct CVD graphene growth on semiconductors and dielectrics for transfer‐free fabrication of electronic devices are reviewed. By employing these methods, various graphene‐related structures can be directly prepared on desired substrates and exhibit excellent performance, providing versatile routes for varied graphene‐based materials fabrication.

Graphene: Near‐Equilibrium Chemical Vapor Deposition of High‐Quality Single‐Crystal Graphene Directly on Various Dielectric Substrates (adv. Mater. 9/2014)

Near-equilibrium Chemical Vapor Deposition of High-Quality Single-Crystal Graphene Directly on Various Dielectric Substrates.

Critical Crystal Growth of Graphene on Dielectric Substrates at Low Temperature for Electronic Devices.

A Systematic Study of Atmospheric Pressure Chemical Vapor Deposition Growth of Large-Area Monolayer Graphene.

Repeated Growth-Etching-Regrowth for Large-Area Defect-Free Single-Crystal Graphene by Chemical Vapor Deposition

Controllable Chemical Vapor Deposition of Large Area Uniform Nanocrystalline Graphene Directly on Silicon Dioxide

Chemical Vapor Deposition of Nanocrystalline Graphene Directly on Arbitrary High-Temperature Insulating Substrates.

Direct chemical vapor deposition of graphene on dielectric surfaces.

Chemical Vapor Deposition Growth of Large Grapheme Single Crystal from Ethanol

Direct CVD Graphene Growth on Semiconductors and Dielectrics for Transfer‐Free Device Fabrication

Primary Nucleation-Dominated Chemical Vapor Deposition Growth for Uniform Graphene Monolayers on Dielectric Substrate

Direct Growth of Graphene on Silicon by Metal-Free Chemical Vapor Deposition

Recent Advances in Transfer‐Free Synthesis of High‐Quality Graphene

Fast Growth of Graphene on SiO2/Si Substrates by Atmospheric Pressure Chemical Vapor Deposition with Floating Metal Catalysts

Wafer-scale Fabrication of Single-Crystal Graphene on Ge(1 1 0) Substrate by Optimized CH4/H2 Ratio

Graphene: Germanium-Assisted Direct Growth of Graphene on Arbitrary Dielectric Substrates for Heating Devices (small 28/2017)

Epitaxial Growth of 6 In. Single‐Crystalline Graphene on a Cu/Ni (111) Film at 750 °C Via Chemical Vapor Deposition

Millimeter-Size Single-Crystal Graphene by Suppressing Evaporative Loss of Cu During Low Pressure Chemical Vapor Deposition

Autonomously Controlled Homogenous Growth of Wafer‐Sized High‐Quality Graphene Via a Smart Janus Substrate

Repeated Growth and Bubbling Transfer of Graphene with Millimetre-Size Single-Crystal Grains Using Platinum

Modulating Growth of Graphene on Sapphire by Chemical Vapor Deposition