Graphene: Germanium-Assisted Direct Growth of Graphene on Arbitrary Dielectric Substrates for Heating Devices (small 28/2017)

Ziwen Wang,Zhongying Xue,Miao Zhang,Yongqiang Wang,Xiaoming Xie,Paul K. Chu,Peng Zhou,Zengfeng Di,Xi Wang
DOI: https://doi.org/10.1002/smll.201770150
IF: 13.3
2017-01-01
Small
Abstract:In article number 1700929, by Peng Zhou, Zengfeng Di, and co-workers, graphene with the desired pattern is produced on arbitrary dielectric substrates by a semiconducting, germanium-assisted, chemical vapor deposition approach, in which the complete sublimation of the catalytic Ge layer occurs during or immediately after the formation of the monolayer graphene.
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