Abstract:The development of high-performance graphene-based nanoelectronics requires the integration of ultrathin and pinhole-free high-k dielectric films with graphene at the wafer scale. Here, we demonstrate that self-assembled monolayers of perylene-3,4,9,10-tetracarboxylic dianhydride (PTCDA) act as effective organic seeding layers for atomic layer deposition (ALD) of HfO(2) and Al(2)O(3) on epitaxial graphene on SiC(0001). The PTCDA is deposited via sublimation in ultrahigh vacuum and shown to be highly ordered with low defect density by molecular-resolution scanning tunneling microscopy. Whereas identical ALD conditions lead to incomplete and rough dielectric deposition on bare graphene, the chemical functionality provided by the PTCDA seeding layer yields highly uniform and conformal films. The morphology and chemistry of the dielectric films are characterized by atomic force microscopy, ellipsometry, cross-sectional scanning electron microscopy, and X-ray photoelectron spectroscopy, while high-resolution X-ray reflectivity measurements indicate that the underlying graphene remains intact following ALD. Using the PTCDA seeding layer, metal-oxide-graphene capacitors fabricated with a 3 nm Al(2)O(3) and 10 nm HfO(2) dielectric stack show high capacitance values of ∼700 nF/cm(2) and low leakage currents of ∼5 × 10(-9) A/cm(2) at 1 V applied bias. These results demonstrate the viability of sublimated organic self-assembled monolayers as seeding layers for high-k dielectric films in graphene-based nanoelectronics.

Direct Growth of High-Quality Al2o3 Dielectric on Graphene Layers by Low-Temperature H2o-Based Ald

Studies on H2O-based Atomic Layer Deposition of Al2O3 Dielectric on Pristine Graphene

Controlled Direct Growth of Al2O3-doped HfO2 Films on Graphene by H2O-based Atomic Layer Deposition.

HfO2 Dielectric Film Growth Directly on Graphene by H2O-based Atomic Layer Deposition

A Facile Way to Deposit Conformal Al2O3 Thin Film on Pristine Graphene by Atomic Layer Deposition

Improvement of Al2o3 Films on Graphene Grown by Atomic Layer Deposition with Pre-H2o Treatment

Property Transformation of Graphene with Al2O3 Films Deposited Directly by Atomic Layer Deposition

Ultra-thin HfAlO Nanofilms on Graphene Directly Deposited by Atomic Layer Deposition

Atomic-Layer-Deposition Growth of an Ultrathin HfO2 Film on Graphene.

Hydrophobic Surface Treatment and Interrupted Atomic Layer Deposition for Highly Resistive Al2O3 Films on Graphene

Atomic-layer-deposited Nanostructures for Graphene-Based Nanoelectronics

Atomic Layer Deposition Growth and Characterization of Al2O3 Layers on Cu-Supported CVD Graphene

Primary Nucleation-Dominated Chemical Vapor Deposition Growth for Uniform Graphene Monolayers on Dielectric Substrate

Critical Crystal Growth of Graphene on Dielectric Substrates at Low Temperature for Electronic Devices.

Al2O3–Gd2O3 Double-Films Grown on Graphene Directly by H2O-assisted Atomic Layer Deposition

A Novel Method for Direct Growth of A Few-Layer Graphene on Al2o3 Film

Atomic Layer Deposition of Al2O3 Directly on 2D Materials for High‐Performance Electronics

Growth Behavior Evolution of Al2O3 Deposited on HOPG by Atomic Layer Deposition

Using top graphene layer as sacrificial protection during dielectric atomic layer deposition

Seeding atomic layer deposition of high-k dielectrics on epitaxial graphene with organic self-assembled monolayers

Water-assisted Rapid Growth of Monolayer Graphene Films on SiO2/Si Substrates